FF1200R17KE3B2NOSA1
FF1200R17KE3B2NOSA1 Datasheet
FF1200R17KE3_B2
| Part | Datasheet |
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FF1200R17KE3B2NOSA1 |
FF1200R17KE3B2NOSA1 (pdf) |
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| IGBT-Module IGBT-modules FF1200R17KE3_B2 Kollektor-Emitter-Sperrspannung Tvj = 25°C Kollektor-Dauergleichstrom TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C tP = 1 ms Gesamt-Verlustleistung TC = 25°C, Tvj max = 150°C Gate-Emitter-Spitzenspannung VCES IC nom IC ICRM Ptot VGES 1700 1200 1700 2400 6,60 +/-20 Kollektor-Emitter-Sättigungsspannung IC = 1200 A, VGE = 15 V IC = 1200 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung IC = 48,0 mA, VCE = VGE, Tvj = 25°C Gateladung VGE = -15 V +15 V Tvj = 25°C Eingangskapazität f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom VCE = 1700 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25°C IC = 1200 A, VCE = 900 V VGE = ±15 V RGon = 1,2 Tvj = 25°C Tvj = 125°C IC = 1200 A, VCE = 900 V VGE = ±15 V RGon = 1,2 Tvj = 25°C Tvj = 125°C IC = 1200 A, VCE = 900 V VGE = ±15 V RGoff = 1,5 Tvj = 25°C Tvj = 125°C IC = 1200 A, VCE = 900 V VGE = ±15 V RGoff = 1,5 |
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