BUZ30A

BUZ30A Datasheet

BUZ 30A

Part	Datasheet
BUZ30A	BUZ30A (pdf)

PDF Datasheet Preview
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated BUZ 30A Pin 1 G Pin 2 D Pin 3 S Type BUZ 30A VDS 200 V ID 21 A RDS on Maximum Ratings Parameter Continuous drain current TC = 26 Pulsed drain current TC = 25 Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 21 A, VDD = 50 V, RGS = 25 L = mH, Tj = 25 Gate source voltage Power dissipation TC = 25 Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Package PG-TO-220-3 Pb-free Yes Symbol ID IDpuls IAR EAR EAS VGS Ptot Tj Tstg RthJC RthJA Values Unit ± 20 -55 + 150 -55 + 150 55 / 150 / 56 2009-04-07 BUZ 30A Electrical Characteristics, at Tj = unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = mA, Tj = 25 Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 200 V, VGS = 0 V, Tj = 25 VDS = 200 V, VGS = 0 V, Tj = 125 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID = A min. Values typ. max. V BR DSS VGS th IDSS IGSS RDS on 4 1 100 Unit V

PDF Datasheet Preview

SIPMOS Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated

BUZ 30A

Pin 1 G

Pin 2 D

Pin 3 S

Type BUZ 30A

VDS 200 V

ID 21 A

RDS on

Maximum Ratings Parameter Continuous drain current TC = 26 Pulsed drain current TC = 25 Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse

ID = 21 A, VDD = 50 V, RGS = 25

L = mH, Tj = 25 Gate source voltage Power dissipation TC = 25 Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Package PG-TO-220-3

Pb-free Yes

Symbol ID

IDpuls

IAR EAR EAS

VGS Ptot

Tj Tstg RthJC RthJA

Values

Unit
± 20
-55 + 150
-55 + 150
55 / 150 / 56
2009-04-07

BUZ 30A

Electrical Characteristics, at Tj = unless otherwise specified

Parameter

Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = mA, Tj = 25 Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 200 V, VGS = 0 V, Tj = 25 VDS = 200 V, VGS = 0 V, Tj = 125 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID = A
min.

Values typ.
max.

V BR DSS

VGS th

IDSS

IGSS

RDS on
4 1 100

Unit V

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BUZ30A Datasheet file may be downloaded here without warranties.

Datasheet ID: BUZ30A 637956