IRGP4066-EPBF

IRGP4066-EPBF Datasheet

IRGP4066PbF IRGP4066-EPbF

Part	Datasheet
IRGP4066-EPBF	IRGP4066-EPBF (pdf)

Related Parts	Information
IRGP4066PBF	IRGP4066PBF

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PD - 97577 INSULATED GATE BIPOLAR TRANSISTOR • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 uS short circuit SOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE ON Temperature Coefficient • Tight Parameter Distribution • Lead Free Package IRGP4066PbF IRGP4066-EPbF n-channel VCES = 600V IC Nominal = 75A tSC 5us, TJ max = 175°C VCE on typ. = 1.7V • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE ON and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation TO-247AC IRGP4066PbF TO-247AD IRGP4066-EPbF G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC TC = 25°C IC TC = 100°C INOMINAL ICM ILM VGE PD TC = 25°C PD TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE = 15V c Clamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance Parameter f Thermal Resistance Junction-to-Case Thermal Resistance, Case-to-Sink flat, greased surface Thermal Resistance, Junction-to-Ambient typical socket mount Max. 600 140 90 75 225 300 ±20 ±30 454 227 -55 to +175 300 in. 1.6mm from case 10 lbf•in N•m Min. Typ. Max. 40 Units V Units °C/W 10/8/2010 IRGP4066PbF/IRGP4066-EPbF Electrical Characteristics TJ = 25°C unless otherwise specified Parameter Min. Typ. Max. V BR CES Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage VCE on

PDF Datasheet Preview

PD - 97577

INSULATED GATE BIPOLAR TRANSISTOR
• Low VCE ON Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 5 uS short circuit SOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE ON Temperature Coefficient
• Tight Parameter Distribution
• Lead Free Package

IRGP4066PbF IRGP4066-EPbF
n-channel

VCES = 600V IC Nominal = 75A tSC 5us, TJ max = 175°C VCE on typ. = 1.7V
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to

Low VCE ON and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation

TO-247AC IRGP4066PbF

TO-247AD IRGP4066-EPbF

G Gate

C Collector

E Emitter

Absolute Maximum Ratings

Parameter

VCES IC TC = 25°C IC TC = 100°C INOMINAL ICM ILM VGE

PD TC = 25°C PD TC = 100°C TJ TSTG

Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE = 15V
c Clamped Inductive Load Current, VGE = 20V

Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw

Thermal Resistance

Parameter
f Thermal Resistance Junction-to-Case

Thermal Resistance, Case-to-Sink flat, greased surface

Thermal Resistance, Junction-to-Ambient typical socket mount

Max. 600 140 90 75 225 300 ±20 ±30 454 227 -55 to +175
300 in. 1.6mm from case 10 lbf•in N•m

Min.

Typ.

Max. 40

Units V

Units °C/W
10/8/2010

IRGP4066PbF/IRGP4066-EPbF

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

Min. Typ. Max.

V BR CES

Collector-to-Emitter Breakdown Voltage

Temperature Coeff. of Breakdown Voltage

VCE on

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Datasheet ID: IRGP4066-EPBF 639072