KSC5039H2
KSC5039H2 Datasheet
KSC5039
| Part | Datasheet |
|---|---|
KSC5039H2 |
KSC5039H2 (pdf) |
| Related Parts | Information |
|---|---|
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KSC5039FTU |
KSC5039FTU |
| PDF Datasheet Preview |
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| KSC5039 KSC5039 High Voltage Power Switch Switching Application TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current * DC Current Gain VCE sat * Collector-Emitter Saturation Voltage VBE sat * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time tSTG Storage Time Fall Time * Plus test PW=300µs, Duty Cycle=2% Pulsed IC = 1mA, IE = 0 IC = 5mA, IB = 0 IC = 1mA, IC=0 VCB = 500V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.3A IC = 2.5A, IB = 0.5A IC = 2.5A, IB = 0.5A VCE = 5V, IC = 0.1A VCB = 10V , f = 1MHz VCC =150V, IC = 2.5A IB1 = -IB2 = 0.5A RL = Value 800 400 7 5 10 3 70 150 - 65 ~ 150 Units V A W °C °C Min. 800 400 Typ. |
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