BSO215C
BSO215C Datasheet
BSO 215 C
| Part | Datasheet |
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BSO215C |
BSO215C (pdf) |
| PDF Datasheet Preview |
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| Preliminary data BSO 215 C Small-Signal-Transistor Features • Dual N- and P -Channel • Enhancement mode • Logic Level • Avalanche rated • dv/dt rated Product Summary Drain source voltage Drain-Source on-state resistance RDS on Continuous drain current ID P -20 V Type BSO 215 C Package SO 8 Ordering Code Q67041-S4025 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value ±20 ±20 55/150/56 Unit A kV/µs V W °C 1999-09-22 Preliminary data BSO 215 C Termal Characteristics Parameter Dynamic Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB min. footprint t 10 sec. 6 cm2 cooling area 1 t 10 sec. min. footprint t 10 sec. 6 cm2 cooling area 1 t 10 sec. Values Unit min. typ. max. N RthJS - 40 K/W RthJA - 110 - 100 Static Characteristics, at Tj = 25 °C, unless otherwise specified Drain- source breakdown voltage V BR DSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA Gate threshold voltage, VGS = VDS ID = 10 µA ID = -450 µA VGS th Zero gate voltage drain current VDS = 20 V, VGS = 0 V, Tj = 25 °C VDS = 20 V, VGS = 0 V, Tj = 125 °C VDS = -20 V, VGS = 0 V, Tj = 25 °C VDS = -20 V, VGS = 0 V, Tj = 125 °C IDSS Gate-source leakage current VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V IGSS Drain-Source on-state resistance VGS = V, ID = 3 A VGS = V, ID = -3 A RDS on Drain-Source on-state resistance |
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