BSM150GB170DN2HOSA1

BSM150GB170DN2HOSA1 Datasheet

BSM 150 GB 170 DN2

Part	Datasheet
BSM150GB170DN2HOSA1	BSM150GB170DN2HOSA1 (pdf)

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BSM 150 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 10 Ohm Type BSM 150 GB 170 DN2 VCE IC Package 1700V 220A HALF-BRIDGE 2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VCE VCGR VGE IC ICpuls Ptot Tj Tstg RthJC RthJCD Vis - Ordering Code C67070-A2704-A67 Values Unit 1700 1700 ± 20 A 220 150 1250 + 150 -55 + 150 4000 55 / 150 / 56 Semiconductor Group Aug-01-1996 BSM 150 GB 170 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Gate threshold voltage VGE th VGE = VCE, IC = 10 mA Collector-emitter saturation voltage VCE sat VGE = 15 V, IC = 150 A, Tj = 25 °C VGE = 15 V, IC = 150 A, Tj = 125 °C Zero gate voltage collector current ICES VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V AC Characteristics Transconductance VCE = 20 V, IC = 150 A Input capacitance Ciss

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BSM 150 GB 170 DN2

IGBT Power Module Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• RG on,min = 10 Ohm

Type BSM 150 GB 170 DN2

VCE IC

Package
1700V 220A HALF-BRIDGE 2

Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature

Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Symbol VCE VCGR

VGE IC

ICpuls

Ptot

Tj Tstg RthJC RthJCD Vis -
Ordering Code C67070-A2704-A67

Values

Unit
1700
1700 ± 20

A 220 150
1250
+ 150
-55 + 150
4000
55 / 150 / 56

Semiconductor Group

Aug-01-1996

BSM 150 GB 170 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
min.
typ.
max.

Static Characteristics

Gate threshold voltage

VGE th

VGE = VCE, IC = 10 mA

Collector-emitter saturation voltage

VCE sat

VGE = 15 V, IC = 150 A, Tj = 25 °C

VGE = 15 V, IC = 150 A, Tj = 125 °C

Zero gate voltage collector current

ICES

VCE = 1700 V, VGE = 0 V, Tj = 25 °C

VCE = 1700 V, VGE = 0 V, Tj = 125 °C

Gate-emitter leakage current

IGES

VGE = 20 V, VCE = 0 V

AC Characteristics

Transconductance

VCE = 20 V, IC = 150 A

Input capacitance

Ciss

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Datasheet ID: BSM150GB170DN2HOSA1 637784