BSD314SPEL6327HTSA1
BSD314SPEL6327HTSA1 Datasheet
BSD314SPE
| Part | Datasheet |
|---|---|
BSD314SPEL6327HTSA1 |
BSD314SPEL6327HTSA1 (pdf) |
| PDF Datasheet Preview |
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| OptiMOS -P 3 Small-Signal-Transistor Features • P-channel • Enhancement mode • Logic level 4.5V rated • ESD protected • Qualified according AEC Q101 • 100% Lead-free RoHS compliant • Halogen-free according to IEC61249-2-21 BSD314SPE Product Summary VDS RDS on ,max VGS=-10 V VGS=-4.5 V 30 V 140 mW 230 A PG-SOT-363 Type BSD314SPE Package Tape and Reel Information PG-SOT-363 H6327 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking XDs Lead Free Packing Non dry Value Unit Avalanche energy, single pulse I D=-1.5A, R GS=25 W Gate source voltage Power dissipation1 Operating and storage temperature dv /dt I D=-1.5 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C P tot T A=25 °C T j, T stg ESD Class JESD22-A114 -HBM Soldering Temperature IEC climatic category DIN IEC 68-1 kV/µs ±20 -55 150 1000V to 2000V 260 °C 55/150/56 |
| More datasheets: MAX9452EHJ+ | MAX9451EHJ+ | MAX9451EHJ+T | MAX9452EHJ+T | MAX9450EHJ+ | MAX9450EHJ+T | 3360-4-14-21-00-00-08-0 | IPI80CN10N G | IPU78CN10N G | IPB79CN10N G |
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