IPI80CN10N G
IPI80CN10N G Datasheet
IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G
| Part | Datasheet |
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IPI80CN10N G |
IPI80CN10N G (pdf) |
| Related Parts | Information |
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IPU78CN10N G |
IPU78CN10N G |
IPB79CN10N G |
IPB79CN10N G |
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| IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on Product Summary V DS R DS on ,max TO252 ID 100 V 78 m 13 A • 175 °C operating temperature • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target application • Ideal for high-frequency switching and synchronous rectification Type IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G Package Marking PG-TO263-3 79CN10N PG-TO252-3 78CN10N PG-TO262-3 80CN10N PG-TO220-3 80CN10N PG-TO251-3 78CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current T C=25 °C T C=100 °C Pulsed drain current2 I D,pulse T C=25 °C Avalanche energy, single pulse Gate source voltage3 E AS V GS I D=13 A, R GS=25 : Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 1 J-STD20 and JESD22 2 see figure 3 Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V ±20 -55 175 55/175/56 2007-08-29 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G |
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