BSC032N03SG

BSC032N03SG Datasheet

BSC032N03S G

Part	Datasheet
BSC032N03SG	BSC032N03SG (pdf)

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Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • Logic level / N-channel • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • Superior thermal resistance • Avalanche rated • dv /dt rated • Pb-free lead plating RoHS compliant Product Summary V DS R DS on ,max ID BSC032N03S G 30 V 100 A PG-TDSON-8 Type BSC032N03S G Package PG-TDSON-8 Marking 32N03S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C T C=100 °C T A=25 °C, R thJA=45 K/W2 Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T C=25 °C3 I D=50 A, R GS=25 dv /dt I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation P tot T C=25 °C T A=25 °C, R thJA=45 K/W2 Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 100 77 23 200 550 ±20 78 -55 150 55/150/56 Unit A mJ kV/µs V W °C 2006-08-28 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area2 BSC032N03S G min.

PDF Datasheet Preview

Power-Transistor

Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• Logic level / N-channel
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on
• Superior thermal resistance
• Avalanche rated
• dv /dt rated
• Pb-free lead plating RoHS compliant

Product Summary V DS R DS on ,max ID

BSC032N03S G
30 V 100 A

PG-TDSON-8

Type BSC032N03S G

Package PG-TDSON-8

Marking 32N03S

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C

T C=100 °C

T A=25 °C, R thJA=45 K/W2

Pulsed drain current Avalanche energy, single pulse

I D,pulse E AS

T C=25 °C3 I D=50 A, R GS=25
dv /dt

I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C

Gate source voltage

Power dissipation

P tot

T C=25 °C

T A=25 °C, R thJA=45 K/W2

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value 100 77 23 200 550
±20 78 -55 150 55/150/56

Unit A
mJ kV/µs V W
°C 2006-08-28

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case Thermal resistance, junction - ambient

R thJC R thJA
minimal footprint 6 cm2 cooling area2

BSC032N03S G
min.

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Datasheet ID: BSC032N03SG 637746