BG 5130R E6327

BG 5130R E6327 Datasheet

Part	Datasheet
BG 5130R E6327	BG 5130R E6327 (pdf)

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BG5130R DUAL - N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF-and VHF - tuners with 3V up to 5V supply voltage • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • Biasing network partially integrated BG5130R Input RG1 Drain RF Output + DC ESD Electrostatic discharge sensitive device, observe handling precaution! Type BG5130R Package Pin Configuration Marking SOT363 1=G1* 2=S 3=D* 4=D 5=G2 6=G1 KYs * For amp. A ** for amp. B Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS 78 °C Storage temperature Channel temperature Symbol VDS ID ±IG1/2SM ±VG1/G2S Ptot Tstg Tch Value 8 25 1 6 200 -55 150 Unit V mA 2006-04-13 BG5130R Thermal Resistance Parameter Channel - soldering point1 Symbol Rthchs Value Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 1 µA, VG1S = 0 , VG2S = 0 V BR DS Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 +V BR G1SS 6 +V BR G2SS 6 +IG1SS 50 nA Gate2-source leakage current VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current VDS = 3 V, VG1S = 0 , VG2S = 3 V Drain-source current VDS = 3 V, VG2S = 3 V, RG1 = 100

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BG5130R

DUAL - N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHF-and VHF - tuners with 3V up to 5V supply voltage
• Integrated gate protection diodes
• Low noise figure
• High gain, high forward transadmittance
• Improved cross modulation at gain reduction
• Biasing network partially integrated

BG5130R

Input RG1

Drain

RF Output + DC

ESD Electrostatic discharge sensitive device, observe handling precaution!

Type BG5130R

Package

Pin Configuration

Marking

SOT363 1=G1* 2=S 3=D* 4=D** 5=G2 6=G1** KYs
* For amp. A ** for amp. B

Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS 78 °C Storage temperature Channel temperature

Symbol VDS ID ±IG1/2SM ±VG1/G2S Ptot

Tstg Tch

Value 8 25 1 6 200
-55 150

Unit V mA
2006-04-13

BG5130R

Thermal Resistance Parameter Channel - soldering point1

Symbol Rthchs

Value

Unit

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

DC Characteristics

Drain-source breakdown voltage ID = 1 µA, VG1S = 0 , VG2S = 0

V BR DS

Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0
+V BR G1SS 6
+V BR G2SS 6
+IG1SS
50 nA

Gate2-source leakage current VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current VDS = 3 V, VG1S = 0 , VG2S = 3 V Drain-source current VDS = 3 V, VG2S = 3 V, RG1 = 100

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Datasheet ID: BG5130RE6327 637693