KSC5367FTU
KSC5367FTU Datasheet
KSC5367F
| Part | Datasheet |
|---|---|
KSC5367FTU |
KSC5367FTU (pdf) |
| PDF Datasheet Preview |
|---|
| KSC5367F KSC5367F High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area • High Collector-Base Voltage TO-220F 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current DC *Collector Curren Pulse Base Current DC *Base Current Pulse Power Dissipation TC=25°C Junction Temperature TSTG Storage Temperature * Pulse Test Pulse Width=5ms, Duty Value 1600 800 12 3 6 2 4 40 150 - 65 ~ 150 Units V A W °C °C Thermal Characteristics TC=25°C unless otherwise noted Characteristics Thermal Resistance Junction to Case Junction to Ambient Rating Unit °C/W 2001 Fairchild Semiconductor Corporation KSC5367F Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE sat VBE sat Cob tON tSTG tF tON tSTG tF |
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