IRL3303D1

IRL3303D1 Datasheet

IRL3303

Part	Datasheet
IRL3303D1	IRL3303D1 (pdf)

Related Parts	Information
IRL3303	IRL3303
IRL3303D1STRL	IRL3303D1STRL
IRL3303D1STRR	IRL3303D1STRR
IRL3303D1S	IRL3303D1S

PDF Datasheet Preview
l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID TC = 25°C ID TC = 100°C IDM PD = 25°C VGS EAS IAR EAR dv/dt TJ T STG Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Thermal Resistance Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 9.1322B IRL3303 Power MOSFET VDSS = 30V RDS on = ID = 38A TO-220AB Max. 38 27 140 68 ±16 130 20 -55 to + 175 300 1.6mm from case 10 lbf•in 1.1N•m Min. Typ. Max. 62 Units A W W/°C V mJ A mJ V/ns °C Units °C/W 8/25/97 IRL3303 Electrical Characteristics TJ = 25°C unless otherwise specified Parameter Min. Typ. Max. Units Conditions V BR DSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, ID = 250µA Breakdown Voltage Temp. Coefficient V/°C Reference to 25°C, ID = 1mA RDS on Static Drain-to-Source On-Resistance VGS = 10V, ID = 20A - VGS = 4.5V, ID = 17A - VGS th Gate Threshold Voltage V VDS = VGS, ID = 250µA

PDF Datasheet Preview

l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

ID TC = 25°C ID TC = 100°C IDM PD = 25°C

VGS EAS IAR EAR dv/dt TJ T STG

Parameter Continuous Drain Current, VGS 10V Continuous Drain Current, VGS 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Repetitive Avalanche Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.

Thermal Resistance

Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

PD - 9.1322B

IRL3303

Power MOSFET

VDSS = 30V

RDS on =

ID = 38A

TO-220AB

Max. 38 27 140 68 ±16 130 20
-55 to + 175
300 1.6mm from case 10 lbf•in 1.1N•m

Min.

Typ.

Max. 62

Units A W

W/°C V mJ A mJ

V/ns °C

Units °C/W
8/25/97

IRL3303

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

Min. Typ. Max. Units

Conditions

V BR DSS Drain-to-Source Breakdown Voltage
30 V VGS = 0V, ID = 250µA

Breakdown Voltage Temp. Coefficient V/°C Reference to 25°C, ID = 1mA

RDS on

Static Drain-to-Source On-Resistance

VGS = 10V, ID = 20A - VGS = 4.5V, ID = 17A -

VGS th

Gate Threshold Voltage

V VDS = VGS, ID = 250µA

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Datasheet ID: IRL3303D1 639092