BFR 340T E6327
BFR 340T E6327 Datasheet
BFR340T
| Part | Datasheet |
|---|---|
BFR 340T E6327 |
BFR 340T E6327 (pdf) |
| PDF Datasheet Preview |
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| BFR340T NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain Ideal for low current amplifiers and oscillators 2 1 VPS05996 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR340T Marking Pin Configuration Package SC75 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1 TS 113°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Junction - soldering point2 RthJS 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Value 6 15 2 10 2 60 150 -65 150 -65 150 Value Unit V mA mW °C Unit K/W Jul-01-2003 BFR340T Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 5 mA, VCE = 3 V V BR CEO 6 ICES 10 µA ICBO 100 nA IEBO |
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