BFP 182 E7764
BFP 182 E7764 Datasheet
BFP182
| Part | Datasheet |
|---|---|
BFP 182 E7764 |
BFP 182 E7764 (pdf) |
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| NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, F = dB at 900 MHz • Pb-free RoHS compliant package1 • Qualified according AEC Q101 * Short term description BFP182 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFP182 Marking Pin Configuration RGs 1=C 2=E 3=B 4 = E - Package SOT143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2 TS 69 °C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Junction - soldering point3 RthJS 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance Value 12 20 2 35 4 250 150 -65 150 -65 150 Value 325 Unit V mA mW °C Unit K/W 2007-04-20 1 BFP182 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 10 mA, VCE = 8 V, pulse measured V BR CEO 12 ICES 100 µA ICBO 100 nA |
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