BFP 540F E6327
BFP 540F E6327 Datasheet
BFP540F
| Part | Datasheet |
|---|---|
BFP 540F E6327 |
BFP 540F E6327 (pdf) |
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| NPN Silicon RF Transistor BFP540F • For highest gain low noise amplifier at GHz • Outstanding Gms = 20 dB Noise Figure F = dB • Gold metallization for high reliability • SIEGET 45 - Line TSFP-4 to p v ie w d ir e c tio n o f u n r e lin g ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFP540F Marking Pin Configuration ATs* 1=B 2=E 3=C 4=E - Package TSFP-4 * Pin configuration fixed relative to marking see package picture Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1 TS 80°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Junction - soldering point2 RthJS 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Value 14 1 80 8 250 150 -65 150 -65 150 Value 280 Unit V mA mW °C Unit K/W Jan-28-2004 BFP540F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 14 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = V, IC = 0 DC current gain IC = 20 mA, VCE = V V BR CEO ICES |
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