BFG 193 E6433

BFG 193 E6433 Datasheet

BFG193

Part	Datasheet
BFG 193 E6433	BFG 193 E6433 (pdf)

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NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free RoHS compliant package1 • Qualified according AEC Q101 * Short term description BFG193 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFG193 Marking Pin Configuration BFG193 1 = E 2 = B 3 = E 4 = C - Package SOT223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2 TS 87°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Junction - soldering point3 RthJS 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance Value 12 20 2 80 10 600 150 -55 150 -55 150 Value 105 Unit V mA mW °C Unit K/W 2007-04-20 1 BFG193 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 30 mA, VCE = 8 V, pulse measured V BR CEO 12 ICES 100 µA

PDF Datasheet Preview

NPN Silicon RF Transistor*
• For low noise, high-gain amplifiers up to 2 GHz
• For linear broadband amplifiers
• fT = 8 GHz, F = 1 dB at 900 MHz
• Pb-free RoHS compliant package1
• Qualified according AEC Q101
* Short term description

BFG193

ESD Electrostatic discharge sensitive device, observe handling precaution!

Type BFG193

Marking

Pin Configuration

BFG193 1 = E 2 = B 3 = E 4 = C -

Package SOT223

Maximum Ratings

Parameter

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2 TS 87°C Junction temperature Ambient temperature Storage temperature

VCEO VCES VCBO VEBO IC IB Ptot

Tj TA Tstg

Thermal Resistance

Parameter

Junction - soldering point3

RthJS
1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance

Value 12 20 2 80 10 600
150 -55 150 -55 150

Value 105

Unit V
mA mW °C

Unit K/W
2007-04-20 1

BFG193

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 30 mA, VCE = 8 V, pulse measured

V BR CEO 12

ICES
100 µA

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Datasheet ID: BFG193E6433 637665