HGTP20N60A4

HGTP20N60A4 Datasheet

HGTG20N60A4, HGTP20N60A4

Part	Datasheet
HGTP20N60A4	HGTP20N60A4 (pdf)

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Data Sheet HGTG20N60A4, HGTP20N60A4 April 2013 File Number 600 V SMPS IGBT The HGTG20N60A4 and HGTP20N60A4 are combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating. Formerly Developmental Type TA49339. Ordering Information PART NUMBER HGTP20N60A4 PACKAGE TO-220AB BRAND 20N60A4 HGTG20N60A4 TO-247 20N60A4 NOTE When ordering, use the entire part number. • 40 A, 600 V TC = 110°C • Low Saturation Voltage VCE sat = V IC = 20 A • Typical Fall Time............55ns at TJ = 125°C • Low Conduction Loss Packaging JEDEC TO-220AB ALTERNATE VERSION TO-220 JEDEC STYLE TO-247 TO-247 2005 Fairchild Semiconductor Corporation HGTG20N60A4, HGTP20N60A4 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG20N60A4, HGTP20N60A4 Collector to Emitter Voltage .BVCES Collector Current Continuous At TC = 25oC IC25 At TC = 110oC IC110 Collector Current Pulsed Note 1 ICM Gate to Emitter Voltage Continuous. VGES Gate to Emitter Voltage Pulsed VGEM Switching Safe Operating Area at TJ = 150oC Figure 2 SSOA Power Dissipation Total at TC = 25oC PD Power Dissipation Derating TC > 25oC Operating and Storage Junction Temperature Range TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Tech Brief 334 TPKG 70 40 280 ±20 ±30 100A at 600V 290 -55 to 150 300 260 UNIT V W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE Pulse width limited by maximum junction temperature. Electrical Specifications TJ = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS Collector to Emitter Breakdown Voltage BVCES IC = 250uA, VGE = 0V Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA BVECS ICES VCE SAT VGE TH IGES SSOA IC = -10mA, VGE = 0V VCE = 600V TJ = 25oC TJ = 125oC

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Data Sheet

HGTG20N60A4, HGTP20N60A4

April 2013

File Number
600 V SMPS IGBT

The HGTG20N60A4 and HGTP20N60A4 are combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.

Formerly Developmental Type TA49339.
Ordering Information

PART NUMBER HGTP20N60A4

PACKAGE TO-220AB

BRAND 20N60A4

HGTG20N60A4

TO-247
20N60A4
NOTE When ordering, use the entire part number.
• 40 A, 600 V TC = 110°C
• Low Saturation Voltage VCE sat = V IC = 20 A
• Typical Fall Time............55ns at TJ = 125°C
• Low Conduction Loss

Packaging

JEDEC TO-220AB ALTERNATE VERSION

TO-220

JEDEC STYLE TO-247

TO-247
2005 Fairchild Semiconductor Corporation

HGTG20N60A4, HGTP20N60A4

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HGTG20N60A4, HGTP20N60A4

Collector to Emitter Voltage .BVCES

Collector Current Continuous At TC = 25oC IC25 At TC = 110oC IC110

Collector Current Pulsed Note 1 ICM

Gate to Emitter Voltage Continuous. VGES

Gate to Emitter Voltage Pulsed VGEM Switching Safe Operating Area at TJ = 150oC Figure 2 SSOA Power Dissipation Total at TC = 25oC PD Power Dissipation Derating TC > 25oC

Operating and Storage Junction Temperature Range TJ, TSTG

Maximum Lead Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Tech Brief 334 TPKG
70 40 280 ±20 ±30 100A at 600V 290 -55 to 150
300 260

UNIT V

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE Pulse width limited by maximum junction temperature.

Electrical Specifications TJ = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

Collector to Emitter Breakdown Voltage

BVCES

IC = 250uA, VGE = 0V

Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current

Collector to Emitter Saturation Voltage

Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA

BVECS ICES

VCE SAT

VGE TH IGES SSOA

IC = -10mA, VGE = 0V

VCE = 600V

TJ = 25oC

TJ = 125oC

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Datasheet ID: HGTP20N60A4 633897