SE2470-002
SE2470-002 Datasheet
SE2470
| Part | Datasheet |
|---|---|
SE2470-002 |
SE2470-002 (pdf) |
| Related Parts | Information |
|---|---|
SE2470-001 |
SE2470-001 |
| PDF Datasheet Preview |
|---|
| SE2470 AlGaAs Infrared Emitting Diode FEATURES • Miniature, hermetically sealed, pill style, metal can package • nominal beam angle • Wide operating temperature range - to • Higher power output than GaAs at equivalent drive currents • Ideal for direct mounting to printed circuit boards • 880 nm wavelength • Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington DESCRIPTION The SE2470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current. INFRA--1.TIF OUTLINE DIMENSIONS in inches mm Tolerance 3 plc decimals 2 plc decimals DIM_002.ds4 Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE2470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS Free-Air Temperature unless otherwise noted Continuous Forward Current 75 mA Power Dissipation 125 mW [À] Operating Temperature Range Storage Temperature Range Soldering Temperature 10 sec Notes Derate linearly from free-air temperature at the rate of soldered into a double sided printed circuit board. SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE2470 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement gra_111.ds4 Relative intensity -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Forward voltage - V |
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