SE2470-001

SE2470-001 Datasheet

SE2470

Part	Datasheet
SE2470-001	SE2470-001 (pdf)

Related Parts	Information
SE2470-002	SE2470-002

PDF Datasheet Preview
SE2470 AlGaAs Infrared Emitting Diode FEATURES • Miniature, hermetically sealed, pill style, metal can package • nominal beam angle • Wide operating temperature range - to • Higher power output than GaAs at equivalent drive currents • Ideal for direct mounting to printed circuit boards • 880 nm wavelength • Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington DESCRIPTION The SE2470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current. INFRA--1.TIF OUTLINE DIMENSIONS in inches mm Tolerance 3 plc decimals 2 plc decimals DIM_002.ds4 Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE2470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS Free-Air Temperature unless otherwise noted Continuous Forward Current 75 mA Power Dissipation 125 mW [À] Operating Temperature Range Storage Temperature Range Soldering Temperature 10 sec Notes Derate linearly from free-air temperature at the rate of soldered into a double sided printed circuit board. SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE2470 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement gra_111.ds4 Relative intensity -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Forward voltage - V

PDF Datasheet Preview

SE2470

AlGaAs Infrared Emitting Diode

FEATURES
• Miniature, hermetically sealed, pill style, metal
can package
• nominal beam angle
• Wide operating temperature range
- to
• Higher power output than GaAs at equivalent
drive currents
• Ideal for direct mounting to printed circuit boards
• 880 nm wavelength
• Mechanically and spectrally matched to SD2420
photodiode, SD2440 phototransistor and SD2410 photodarlington

DESCRIPTION The SE2470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.

INFRA--1.TIF

OUTLINE DIMENSIONS in inches mm Tolerance 3 plc decimals
2 plc decimals

DIM_002.ds4

Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.

SE2470

AlGaAs Infrared Emitting Diode

ELECTRICAL CHARACTERISTICS PARAMETER

SYMBOL MIN TYP MAX UNITS

TEST CONDITIONS

ABSOLUTE MAXIMUM RATINGS

Free-Air Temperature unless otherwise noted

Continuous Forward Current
75 mA

Power Dissipation
125 mW [À]

Operating Temperature Range

Storage Temperature Range

Soldering Temperature 10 sec

Notes Derate linearly from free-air temperature at the rate of soldered into a double sided printed circuit board.

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and
supply the best products possible.

SE2470

AlGaAs Infrared Emitting Diode

Fig. 1 Radiant Intensity vs Angular Displacement
gra_111.ds4

Relative intensity
-40 -30 -20 -10 0 +10 +20 +30 +40

Angular displacement - degrees

Forward voltage - V

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SE2470-001 Datasheet file may be downloaded here without warranties.

Datasheet ID: SE2470-001 636524