SDP8406-004

SDP8406-004 Datasheet

SDP8406

Part	Datasheet
SDP8406-004	SDP8406-004 (pdf)

Related Parts	Information
SDP8406-001	SDP8406-001
SDP8406-003	SDP8406-003
SDP8406-002	SDP8406-002

PDF Datasheet Preview
SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes The SDP8406 is an NPN silicon phototransistor molded in a side-looking clear plastic package. The chip is positioned to accept radiation through a plastic lens from the side of the package. INFRA-21.TIF OUTLINE DIMENSIONS in inches mm Tolerance 3 plc decimals 2 plc decimals DIM_017.ds4 Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SDP8406 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS Free-Air Temperature unless otherwise noted Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 100 mW [À] Operating Temperature Range Storage Temperature Range Soldering Temperature 5 sec Notes Derate linearly from free-air temperature at the rate of SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SDP8406 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT cir_015.cdr SWITCHING WAVEFORM cir_004.cdr Fig. 1 Responsivity vs Angular Displacement gra_054.ds4 Relative response -60 -45 -30 -15 0 +15 +30 +45 +60 Angular displacement - degrees Fig. 3 Dark Current vs Temperature gra_301.cdr Fig. 2 Collector Current vs Ambient Temperature

PDF Datasheet Preview

SDP8406

Silicon Phototransistor

FEATURES
• Side-looking plastic package
• nominal acceptance angle
• Wide sensitivity ranges
• Mechanically and spectrally matched to

SEP8506 and SEP8706 infrared emitting diodes

The SDP8406 is an NPN silicon phototransistor molded in a side-looking clear plastic package. The chip is positioned to accept radiation through a plastic lens from the side of the package.

INFRA-21.TIF

OUTLINE DIMENSIONS in inches mm Tolerance 3 plc decimals
2 plc decimals

DIM_017.ds4

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

SDP8406

Silicon Phototransistor

ELECTRICAL CHARACTERISTICS PARAMETER

SYMBOL MIN TYP MAX UNITS

TEST CONDITIONS

ABSOLUTE MAXIMUM RATINGS

Free-Air Temperature unless otherwise noted

Collector-Emitter Voltage

Emitter-Collector Voltage

Power Dissipation
100 mW [À]

Operating Temperature Range

Storage Temperature Range

Soldering Temperature 5 sec

Notes Derate linearly from free-air temperature at the rate of

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

SDP8406

Silicon Phototransistor

SWITCHING TIME TEST CIRCUIT
cir_015.cdr

SWITCHING WAVEFORM
cir_004.cdr

Fig. 1 Responsivity vs Angular Displacement
gra_054.ds4

Relative response
-60 -45 -30 -15 0 +15 +30 +45 +60

Angular displacement - degrees

Fig. 3 Dark Current vs Temperature
gra_301.cdr

Fig. 2 Collector Current vs Ambient Temperature

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SDP8406-004 Datasheet file may be downloaded here without warranties.

Datasheet ID: SDP8406-004 636522