SD5491-005

SD5491-005 Datasheet


SD5491

Part Datasheet
SD5491-005 SD5491-005 SD5491-005 (pdf)
Related Parts Information
SD5491-003 SD5491-003 SD5491-003
SD5491-004 SD5491-004 SD5491-004
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SD5491

Silicon Phototransistor

FEATURES
• TO-18 metal can package
• nominal acceptance angle
• Wide operating temperature range
- to
• Fast response time
• Wide sensitivity ranges
• External base connection for added control
• Mechanically and spectrally matched to

SE3450/5450, SE3455/5455 and SE3470/5470 infrared emitting diodes

The SD5491 is an NPN silicon phototransistor mounted in a TO-18 metal can package. A biconvex lens provides high optical sensitivity with a narrow acceptance angle to enable maximum radiation coupling. The TO-18 package offers protection against harsh environments as well as excellent thermal characteristics.

INFRA-70.TIF

OUTLINE DIMENSIONS in inches mm Tolerance 3 plc decimals
2 plc decimals

DIA.

DIA.

DIA.

MIN.
45°
.100 2.54 DIA 1 NOM

DIA.
3 PLCS LEADS:

EMITTER TAB BASE COLLECTOR CASE

DIM_016.ds4

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

SD5491

Silicon Phototransistor

ELECTRICAL CHARACTERISTICS PARAMETER

SYMBOL MIN TYP MAX UNITS

TEST CONDITIONS

ABSOLUTE MAXIMUM RATINGS

Free-Air Temperature unless otherwise noted

Collector-Emitter Voltage

Emitter-Collector Voltage

Power Dissipation
150 mW [À]

Operating Temperature Range

Storage Temperature Range

Soldering Temperature 10 sec

Notes Derate linearly from free-air temperature at the rate of

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

SD5491

Silicon Phototransistor

SWITCHING TIME TEST CIRCUIT
cir_003.cdr
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Datasheet ID: SD5491-005 636515