SD5491-003
SD5491-003 Datasheet
SD5491
| Part | Datasheet |
|---|---|
SD5491-003 |
SD5491-003 (pdf) |
| Related Parts | Information |
|---|---|
SD5491-005 |
SD5491-005 |
SD5491-004 |
SD5491-004 |
| PDF Datasheet Preview |
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| SD5491 Silicon Phototransistor FEATURES • TO-18 metal can package • nominal acceptance angle • Wide operating temperature range - to • Fast response time • Wide sensitivity ranges • External base connection for added control • Mechanically and spectrally matched to SE3450/5450, SE3455/5455 and SE3470/5470 infrared emitting diodes The SD5491 is an NPN silicon phototransistor mounted in a TO-18 metal can package. A biconvex lens provides high optical sensitivity with a narrow acceptance angle to enable maximum radiation coupling. The TO-18 package offers protection against harsh environments as well as excellent thermal characteristics. INFRA-70.TIF OUTLINE DIMENSIONS in inches mm Tolerance 3 plc decimals 2 plc decimals DIA. DIA. DIA. MIN. 45° .100 2.54 DIA 1 NOM DIA. 3 PLCS LEADS: EMITTER TAB BASE COLLECTOR CASE DIM_016.ds4 Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SD5491 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS Free-Air Temperature unless otherwise noted Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 150 mW [À] Operating Temperature Range Storage Temperature Range Soldering Temperature 10 sec Notes Derate linearly from free-air temperature at the rate of SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SD5491 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT cir_003.cdr |
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