APT31N80JC3

APT31N80JC3 Datasheet

APT31N80JC3

Part	Datasheet
APT31N80JC3	APT31N80JC3 (pdf)

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APT31N80JC3 800V 31A Super Junction MOSFET SOT-227 S COOLMOS Power Semiconductors • Ultra low RDS ON • Ultra Low Gate Charge, Qg • Popular SOT-227 Package • Low Miller Capacitance • Avalanche Energy Rated • N-Channel Enhancement Mode Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. "UL Recognized" MAXIMUM RATINGS All Ratings TC = 25°C unless otherwise specified. Symbol Parameter APT31N80JC3 UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Volts 31 Amps ±20 Volts ±30 Total Power Dissipation TC = 25°C Linear Derating Factor Watts W/°C TJ,TSTG TL dv/dt IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Drain-Source Voltage slope VDS = 640V, ID = 31A, TJ = 125°C Repetitive Avalanche Current 7 Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4 -55 to 150 300 50 17 670 °C V/ns Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BVDSS RDS on IDSS IGSS VGS th Drain-Source Breakdown Voltage VGS = 0V, ID = 500µA Drain-Source On-State Resistance 2 VGS = 10V, ID = 22A Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V, TJ = 150°C Gate-Source Leakage Current VGS = ±20V, VDS = 0V Gate Threshold Voltage VDS = VGS, ID = 2mA MIN 800 TYP MAX UNIT Volts Ohms ±200 nA Volts

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APT31N80JC3
800V 31A

Super Junction MOSFET

SOT-227 S

COOLMOS

Power Semiconductors
• Ultra low RDS ON
• Ultra Low Gate Charge, Qg
• Popular SOT-227 Package
• Low Miller Capacitance
• Avalanche Energy Rated
• N-Channel Enhancement Mode

Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
"UL Recognized"

MAXIMUM RATINGS

All Ratings TC = 25°C unless otherwise specified.

Symbol Parameter

APT31N80JC3

UNIT

VDSS ID IDM VGS

VGSM

Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient

Volts
31 Amps
±20 Volts
±30

Total Power Dissipation TC = 25°C

Linear Derating Factor

Watts W/°C

TJ,TSTG TL dv/dt IAR EAR EAS

Operating and Storage Junction Temperature Range

Lead Temperature from Case for 10 Sec. Drain-Source Voltage slope VDS = 640V, ID = 31A, TJ = 125°C Repetitive Avalanche Current 7 Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4
-55 to 150 300 50 17 670
°C V/ns Amps mJ

STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions

BVDSS RDS on

IDSS

IGSS VGS th

Drain-Source Breakdown Voltage VGS = 0V, ID = 500µA Drain-Source On-State Resistance 2 VGS = 10V, ID = 22A Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V, TJ = 150°C Gate-Source Leakage Current VGS = ±20V, VDS = 0V Gate Threshold Voltage VDS = VGS, ID = 2mA

MIN 800

TYP MAX UNIT

Volts

Ohms
±200 nA

Volts

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Datasheet ID: APT31N80JC3 648657