MB85RS2MTPH-G-JNE1

MB85RS2MTPH-G-JNE1 Datasheet

MB85RS2MT

Part	Datasheet
MB85RS2MTPH-G-JNE1	MB85RS2MTPH-G-JNE1 (pdf)

Related Parts	Information
MB85RS2MTPF-G-JNERE2	MB85RS2MTPF-G-JNERE2

PDF Datasheet Preview
Memory FRAM DS501-00023-0v01-E 2 M 256 K x 8 Bit SPI MB85RS2MT • DESCRIPTION MB85RS2MT is a FRAM Ferroelectric Random Access Memory chip in a configuration of 262,144 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS2MT adopts the Serial Peripheral Interface SPI . The MB85RS2MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS2MT can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RS2MT does not take long time to write data like Flash memories or E2PROM, and MB85RS2MT takes no wait time. • FEATURES • Bit configuration 262,144 words x 8 bits • Serial Peripheral Interface SPI Serial Peripheral Interface Correspondent to SPI mode 0, 0 and mode 3 1, 1 • Operating frequency 25 MHz Max For FSTRD command V to V, 40 MHz Max • High endurance 1013 times / byte • Data retention 10 years +85 °C • Operating power supply voltage V to V • Low power consumption Operating power supply current mA MHz TBD Standby current 150 uA Max TBD Sleep current 10 uA Max TBD • Operation ambient temperature range -40 °C to +85 °C • Package 8-pin plastic SOP FPT-8P-M08 8-pin plastic DIP-8P-M03 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved MB85RS2MT • PIN ASSIGNMENT TOP VIEW TOP VIEW CS SO WP VSS DIP-8P-M03 VDD CS HOLD SO SCK WP FPT-8P-M08 VDD HOLD SCK SI • PIN FUNCTIONAL DESCRIPTIONS • ORDERING INFORMATION Part number MB85RS2MTPF-G-JNE2 MB85RS2MTPF-G-JNERE2 MB85RS2MTPH-G-JNE1 Package 8-pin plastic SOP FPT-8P-M08 8-pin plastic SOP FPT-8P-M08 8-pin plastic DIP-8P-M03 Shipping form Tube Minimum shipping quantity Embossed Carrier tape 2000 Tube DS501-00023-0v01-E MB85RS2MT • PACKAGE DIMENSION 8-pin plastic SOP FPT-8P-M08 Lead pitch Package width x package length Lead shape Lead bend direction Sealing method Mounting height mm x mm Gullwing Normal bend Plastic mold mm Max 8-pin plastic SOP FPT-8P-M08 BTM E-MARK Note 1 Pins width and pins thickness include plating thickness. Note 2 Pins width do not include tie bar cutting remainder. Note 3 # These dimensions do not include resin protrusion. INDEX Details of "A" part Mounting height Stand off 0~8° C 2008-2010 FUJITSU SEMICONDUCTOR LIMITED F08016S-c-1-2 Please check the latest package dimension at the following URL. Dimensions in mm inches . Note The values in parentheses are reference values. Continued DS501-00023-0v01-E Continued 8-pin plastic DIP MB85RS2MT Lead pitch Sealing method mm Plastic mold DIP-8P-M03 8-pin plastic DIP-8P-M03

PDF Datasheet Preview

Memory FRAM

DS501-00023-0v01-E
2 M 256 K x 8 Bit SPI

MB85RS2MT
• DESCRIPTION

MB85RS2MT is a FRAM Ferroelectric Random Access Memory chip in a configuration of 262,144 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS2MT adopts the Serial Peripheral Interface SPI . The MB85RS2MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS2MT can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RS2MT does not take long time to write data like Flash memories or E2PROM, and MB85RS2MT takes no wait time.
• FEATURES
• Bit configuration
262,144 words x 8 bits
• Serial Peripheral Interface

SPI Serial Peripheral Interface

Correspondent to SPI mode 0, 0 and mode 3 1, 1
• Operating frequency
25 MHz Max

For FSTRD command V to V, 40 MHz Max
• High endurance
1013 times / byte
• Data retention
10 years +85 °C
• Operating power supply voltage V to V
• Low power consumption

Operating power supply current mA MHz TBD

Standby current 150 uA Max TBD

Sleep current 10 uA Max TBD
• Operation ambient temperature range -40 °C to +85 °C
• Package
8-pin plastic SOP FPT-8P-M08
8-pin plastic DIP-8P-M03

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved

MB85RS2MT
• PIN ASSIGNMENT

TOP VIEW

TOP VIEW

CS SO WP VSS

DIP-8P-M03

VDD CS

HOLD SO

SCK WP

FPT-8P-M08

VDD HOLD SCK SI
• PIN FUNCTIONAL DESCRIPTIONS
• ORDERING INFORMATION

Part number MB85RS2MTPF-G-JNE2 MB85RS2MTPF-G-JNERE2 MB85RS2MTPH-G-JNE1

Package
8-pin plastic SOP FPT-8P-M08
8-pin plastic SOP FPT-8P-M08
8-pin plastic DIP-8P-M03

Shipping form Tube

Minimum shipping quantity

Embossed Carrier tape
2000

Tube

DS501-00023-0v01-E

MB85RS2MT
• PACKAGE DIMENSION
8-pin plastic SOP

FPT-8P-M08

Lead pitch Package width x package length

Lead shape Lead bend direction Sealing method

Mounting height
mm x mm

Gullwing Normal bend Plastic mold mm Max
8-pin plastic SOP FPT-8P-M08

BTM E-MARK

Note 1 Pins width and pins thickness include plating thickness. Note 2 Pins width do not include tie bar cutting remainder. Note 3 # These dimensions do not include resin protrusion.

INDEX

Details of "A" part

Mounting height

Stand off
0~8°

C 2008-2010 FUJITSU SEMICONDUCTOR LIMITED F08016S-c-1-2

Please check the latest package dimension at the following URL.

Dimensions in mm inches . Note The values in parentheses are reference values.

Continued

DS501-00023-0v01-E

Continued
8-pin plastic DIP

MB85RS2MT

Lead pitch Sealing method
mm Plastic mold

DIP-8P-M03
8-pin plastic DIP-8P-M03

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MB85RS2MTPH-G-JNE1 Datasheet file may be downloaded here without warranties.

Datasheet ID: MB85RS2MTPH-G-JNE1 635662