MB39C015WQN-G-JN-ERE1

MB39C015WQN-G-JN-ERE1 Datasheet


MB39C015

Part Datasheet
MB39C015WQN-G-JN-ERE1 MB39C015WQN-G-JN-ERE1 MB39C015WQN-G-JN-ERE1 (pdf)
PDF Datasheet Preview
DS04-27254-3E

ASSP for Power Management Applications
2 ch DC/DC Converter IC Built-in Switching FET, Synchronous Rectification, and Down Conversion Support

MB39C015
• DESCRIPTION

The MB39C015 is a current mode type 2-channel DC/DC converter IC built-in voltage detection, synchronous rectifier, and down conversion support. The device is integrated with a switching FET, oscillator, error amplifier, PWM control circuit, reference voltage source, and voltage detection circuit. External inductor and decoupling capacitor are needed only for the external component. As combining with external parts enables a DC/DC converter with a compact and high load response characteristic, this is suitable as the built-in power supply for such as mobile phone/PDA, DVDs, and HDDs.
• FEATURES
• High efficiency
96% Max
• Output current DC/DC
800 mA/ch Max
• Input voltage range

V to V
• Operating frequency

MHz Typ
• No flyback diode needed
• Low dropout operation

For 100% on duty
• Built-in high-precision reference voltage generator V ± 2%
• Consumption current in shutdown mode
1 uA or less
• Built-in switching FET

P-ch MOS Ω Typ N-ch MOS Ω Typ
• High speed for input and load transient response in the current mode
• Over temperature protection
• Packaged in a compact package

QFN-24
• APPLICATIONS
• Flash ROMs
• MP3 players
• Electronic dictionary devices
• Surveillance cameras
• Portable GPS navigators
• DVD drives
• IP phones
• Network hubs
• Mobile phones
etc.

Copyright 2008-2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved

MB39C015
• PIN ASSIGNMENT
• ORDERING INFORMATION

MB39C015WQN

Package
24-pin plastic QFN LCC-24P-M10

MB39C015

Remarks Exposed PAD

DS04-27254-3E

MB39C015
• RoHS COMPLIANCE INFORMATION OF LEAD Pb FREE VERSION

The LSI products of FUJITSU SEMICONDUCTOR with “E1” are compliant with RoHS Directive, and has observed the standard of lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls PBB , and polybrominated diphenyl ethers PBDE . A product whose part number has trailing characters “E1” is RoHS compliant.
• MARKING FORMAT LEAD FREE VERSION
39C015

Lead-free version E1

INDEX
• LABELING SAMPLE LEAD FREE VERSION

Lead-free mark

JEITA logo

JEDEC logo

MB123456P - 789 - GE1
3N 1MB123456P-789-GE1 1000
3N 2 1561190005 107210
1,000

MB123456P - 789 - GE1

QC PASS
2006/03/01

ASSEMBLED IN JAPAN

MB123456P - 789 - GE1
1/1 0605 - Z01A 1000
1561190005

The part number of a lead-free product has the trailing characters “E1”.
“ASSEMBLED IN CHINA” is printed on the label of a product assembled in China.

DS04-27254-3E

MB39C015
• EVALUATION BOARD SPECIFICATION

The MB39C015 Evaluation Board provides the proper for evaluating the efficiency and other characteristics of the MB39C015.
• Terminal information Symbol

Functions

Power supply terminal In standard condition V to V*
* When the VIN/VOUT difference is to be held within V or less, such as for devices
with a standard output voltage VOUT1 = V when VIN < V, FUJITSU SEMI-

CONDUCTOR recommends changing the output capacity C1, C2 to 10 uF.
• EV BOARD ORDERING INFORMATION

EV Board Part No. MB39C015EVB-06

MB39C015

Remarks QFN-24

DS04-27254-3E

MB39C015
• PACKAGE DIMENSION
24-pin plastic QFN

LCC-24P-M10 24-pin plastic QFN

LCC-24P-M10

Lead pitch Package width x package length Sealing method

Mounting height

Weight
mm x mm

Plastic mold mm Max

INDEX AREA
1PIN CORNER C0.35 C.014

C 2009-2010 FUJITSU SEMICONDUCTOR LIMITED C24060S-c-1-2

Please check the latest package dimension at the following URL.

Dimensions in mm inches . Note The values in parentheses are reference values.

DS04-27254-3E

MB39C015
• CONTENTS
page - DESCRIPTION 1 - FEATURES 1 - APPLICATIONS 1 - PIN ASSIGNMENT 2 - PIN DESCRIPTIONS 3 - I/O PIN EQUIVALENT CIRCUIT DIAGRAM 4 - BLOCK DIAGRAM 5 - FUNCTION OF EACH BLOCK 7 - ABSOLUTE MAXIMUM RATINGS 9 - RECOMMENDED OPERATING CONDITIONS 10 - ELECTRICAL CHARACTERISTICS 11 - TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS 13 - APPLICATION NOTES 14 - EXAMPLE OF STANDARD OPERATION CHARACTERISTICS 21 - APPLICATION CIRCUIT EXAMPLES 29 - USAGE PRECAUTIONS 32 - ORDERING INFORMATION 33 - RoHS COMPLIANCE INFORMATION OF LEAD Pb FREE VERSION 34 - MARKING FORMAT LEAD FREE VERSION 34 - LABELING SAMPLE LEAD FREE VERSION 34 - EVALUATION BOARD SPECIFICATION 35 - EV BOARD ORDERING INFORMATION 41 - PACKAGE DIMENSION 42

DS04-27254-3E

MB39C015

FUJITSU SEMICONDUCTOR LIMITED

Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome, Kohoku-ku Yokohama Kanagawa 222-0033, Japan Tel +81-45-415-5858

For further information please contact:

North and South America FUJITSU SEMICONDUCTOR AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel +1-408-737-5600 Fax +1-408-737-5999

Asia Pacific FUJITSU SEMICONDUCTOR ASIA PTE. LTD. 151 Lorong Chuan, #05-08 New Tech Park 556741 Singapore Tel +65-6281-0770 Fax +65-6281-0220

Europe FUJITSU SEMICONDUCTOR EUROPE GmbH Pittlerstrasse 47, 63225 Langen, Germany Tel +49-6103-690-0 Fax +49-6103-690-122

FUJITSU SEMICONDUCTOR SHANGHAI CO., LTD. Rm. 3102, Bund Center, No.222 Yan An Road E , Shanghai 200002, China Tel +86-21-6146-3688 Fax +86-21-6335-1605

Korea FUJITSU SEMICONDUCTOR KOREA LTD. 206 Kosmo Tower Building, 1002 Daechi-Dong, Gangnam-Gu, Seoul 135-280, Republic of Korea Tel +82-2-3484-7100 Fax +82-2-3484-7111

FUJITSU SEMICONDUCTOR PACIFIC ASIA LTD. 10/F., World Commerce Centre, 11 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel +852-2377-0226 Fax +852-2376-3269

Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device FUJITSU SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated 1 for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system , or 2 for use requiring extremely high reliability i.e., submersible repeater and artificial satellite . Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of overcurrent levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners.

Edited Sales Promotion Department
More datasheets: DBMM-13W3S-A101 | 76650-0116 | IRF6635TRPBF | IRF6635TR1PBF | MK11-1A66C-500W | APTGF25X120T3G | DS2109S/T&R | DS2109S | CA3102R20-23PF80 | MIKROE-2525


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MB39C015WQN-G-JN-ERE1 Datasheet file may be downloaded here without warranties.

Datasheet ID: MB39C015WQN-G-JN-ERE1 635660