IRF6635TR1PBF

IRF6635TR1PBF Datasheet

IRF6635PbF

Part	Datasheet
IRF6635TR1PBF	IRF6635TR1PBF (pdf)

Related Parts	Information
IRF6635TRPBF	IRF6635TRPBF

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l RoHs Compliant l Lead-Free Qualified up to 260°C Reflow l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile <0.7mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques PD - 97086 IRF6635PbF IRF6635TRPbF DirectFET Power MOSFET Typical values unless otherwise specified VDSS RDS on RDS on 30V max ±20V max 10V 4.5V Qg tot Qgd Qgs2 Qoss Vgs th 47nC 17nC 4.7nC 48nC 29nC 1.8V DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline see p.7,8 for The IRF6635PbF combines the latest Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by The IRF6635PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/ high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6635PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets. Absolute Maximum Ratings Parameter Max. Units VGS ID TA = 25°C ID TA = 70°C ID TC = 25°C IDM EAS IAR Drain-to-Source Voltage Gate-to-Source Voltage e Continuous Drain Current, VGS 10V e Continuous Drain Current, VGS 10V f Continuous Drain Current, VGS 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current ±20 ID = 32A ID= 25A VDS = 24V VDS = 15V TJ = 125°C Typical RDS on VGS, Gate-to-Source Voltage V 2 TJ = 25°C 0 1 2 3 4 5 6 7 8 9 10 VGS, Gate -to -Source Voltage V Fig Typical On-Resistance vs. Gate-to-Source Voltage Notes Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. QG Total Gate Charge nC Fig Total Gate Charge vs. Gate-to-Source Voltage - TC measured with thermocouple mounted to top Drain of part. Repetitive rating pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.63mH, RG = IAS = 25A. 5/3/06

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l RoHs Compliant l Lead-Free Qualified up to 260°C Reflow l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile <0.7mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques

PD - 97086

IRF6635PbF

IRF6635TRPbF

DirectFET Power MOSFET

Typical values unless otherwise specified

VDSS

RDS on

RDS on
30V max ±20V max 10V 4.5V

Qg tot Qgd Qgs2

Qoss Vgs th
47nC 17nC 4.7nC 48nC 29nC 1.8V

DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline see p.7,8 for

The IRF6635PbF combines the latest Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by

The IRF6635PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The

IRF6635PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.

Absolute Maximum Ratings

Parameter

Max.

Units

VGS ID TA = 25°C ID TA = 70°C ID TC = 25°C IDM EAS IAR

Drain-to-Source Voltage Gate-to-Source Voltage
e Continuous Drain Current, VGS 10V e Continuous Drain Current, VGS 10V f Continuous Drain Current, VGS 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current
±20

ID = 32A

ID= 25A

VDS = 24V VDS = 15V

TJ = 125°C

Typical RDS on VGS, Gate-to-Source Voltage V
2 TJ = 25°C
0 1 2 3 4 5 6 7 8 9 10

VGS, Gate -to -Source Voltage V Fig Typical On-Resistance vs. Gate-to-Source Voltage

Notes Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.

QG Total Gate Charge nC

Fig Total Gate Charge vs. Gate-to-Source Voltage
- TC measured with thermocouple mounted to top Drain of part. Repetitive rating pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.63mH, RG = IAS = 25A.
5/3/06

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Datasheet ID: IRF6635TR1PBF 639036