EPC2036ENGRT

EPC2036ENGRT Datasheet

EPC2036ENGRT Enhancement Mode Power Transistor Preliminary Specification Sheet

Part	Datasheet
EPC2036ENGRT	EPC2036ENGRT (pdf)

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EPC2036ENGRT Enhancement Mode Power Transistor Preliminary Specification Sheet Status Engineering Features: • VDS, 100 V • Maximum RDS on , 73 • ID, 1 A Applications • High Frequency DC-DC Conversion • Wireless Power Transfer • LiDAR/Pulsed Power Applications EPC2036ENGRT FETs are supplied in passivated die form with solder bumps. Die Size mm x mm Maximum Ratings Drain-to-Source Voltage Continuous Drain-to-Source Voltage up to 10,000 5ms pulses at 120 Continuous TA = 340 Pulsed TPULSE = 300 µs Gate-to-Source Voltage Gate-to-Source Voltage Operating Temperature TSTG Storage Temperature -40 to 150 -40 to 150 PARAMETER Static Characteristics TJ= unless otherwise stated TEST CONDITIONS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 300 µA IDSS Drain Source Leakage VDS = 80 V, VGS = 0 V Gate-to-Source Forward Leakage IGSS VGS = 5 V VGS = -4 V VGS TH Gate Threshold Voltage VDS = VGS, ID = mA RDS on VSD Drain-Source On Resistance Source-Drain Forward Voltage VGS = 5 V, ID = 1 A IS = A, VGS = 0 V All measurements were done with substrate shorted to source. Thermal Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Board Thermal Resistance, Junction to Ambient Note 1 Note 1 is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. UNIT UNIT Subject to Change without Notice COPYRIGHT 2016

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EPC2036ENGRT Enhancement Mode Power Transistor Preliminary Specification Sheet

Status Engineering Features:
• VDS, 100 V
• Maximum RDS on , 73
• ID, 1 A Applications
• High Frequency DC-DC Conversion
• Wireless Power Transfer
• LiDAR/Pulsed Power Applications

EPC2036ENGRT FETs are supplied in passivated die form with solder bumps. Die Size mm x mm

Maximum Ratings

Drain-to-Source Voltage Continuous

Drain-to-Source Voltage up to 10,000 5ms pulses at 120

Continuous TA = 340

Pulsed TPULSE = 300 µs

Gate-to-Source Voltage

Gate-to-Source Voltage

Operating Temperature

TSTG Storage Temperature
-40 to 150 -40 to 150

PARAMETER

Static Characteristics TJ= unless otherwise stated

TEST CONDITIONS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, ID = 300 µA

IDSS

Drain Source Leakage

VDS = 80 V, VGS = 0 V

Gate-to-Source Forward Leakage IGSS

VGS = 5 V VGS = -4 V

VGS TH

Gate Threshold Voltage

VDS = VGS, ID = mA

RDS on VSD

Drain-Source On Resistance Source-Drain Forward Voltage

VGS = 5 V, ID = 1 A IS = A, VGS = 0 V

All measurements were done with substrate shorted to source.

Thermal Characteristics

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Board

Thermal Resistance, Junction to Ambient Note 1

Note 1 is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details.

UNIT

UNIT

Subject to Change without Notice

COPYRIGHT 2016

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived EPC2036ENGRT Datasheet file may be downloaded here without warranties.

Datasheet ID: EPC2036ENGRT 510917