AO4498EL

AO4498EL Datasheet


AO4498EL

Part Datasheet
AO4498EL AO4498EL AO4498EL (pdf)
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AO4498EL
30V N-Channel MOSFET

Product Summary

The AO4498EL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V

ESD Protected 100% Rg Tested
30V 18A

SOIC-8

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

TA=25°C TA=70°C

Pulsed Drain Current C

TA=25°C Power Dissipation B TA=70°C

Junction and Storage Temperature Range

TJ, TSTG

Maximum 30 ±20 18 14 120 2
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State
31 59

Maximum Junction-to-Lead

Steady-State

Max 40 75 24

Units V

W °C

Units °C/W °C/W °C/W

Page 1 of 5

AO4498EL

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current
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Datasheet ID: AO4498EL 516179