AO4498EL
AO4498EL Datasheet
AO4498EL
| Part | Datasheet |
|---|---|
AO4498EL |
AO4498EL (pdf) |
| PDF Datasheet Preview |
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| AO4498EL 30V N-Channel MOSFET Product Summary The AO4498EL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications. VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V ESD Protected 100% Rg Tested 30V 18A SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 18 14 120 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 31 59 Maximum Junction-to-Lead Steady-State Max 40 75 24 Units V W °C Units °C/W °C/W °C/W Page 1 of 5 AO4498EL Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current |
| More datasheets: HLMP-LD61-SWTZZ | HLMP-LB61-PT0ZZ | HLMP-LM61-X20ZZ | 17-300400 | 17-300380 | 17-300390 | SMP2-GC | 37765 | 37764 | S5U13781P00C100 |
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