Obsolete. Alternative is ZVN0124A.
Part | Datasheet |
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ZVN2120ASTZ (pdf) |
Related Parts | Information |
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ZVN2120ASTOB |
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ZVN2120ASTOA |
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ZVN2120A |
PDF Datasheet Preview |
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Obsolete. Alternative is ZVN0124A. N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS on = ZVN2120A ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE 200 180 2 ± 20 700 -55 to +150 UNIT V mA A V mW °C ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 200 ID=1mA, VGS=0V Gate-Source Threshold Voltage VGS th ID=1mA, VDS= VGS Gate-Body Leakage Zero Gate Voltage Drain Current IGSS IDSS nA VGS=± 20V, VDS=0V µA VDS=200V, VGS=0 100 µA VDS=160V, VGS=0V, T=125°C 2 On-State Drain Current 1 ID on Static Drain-Source On-State RDS on Resistance 1 mA VDS=25V, VGS=10V VGS=10V,ID=250mA Forward Transconductance gfs mS VDS=25V,ID=250mA Input Capacitance 2 Common Source Output Capacitance 2 Ciss Coss pF VDS=25 V, VGS=0V, f=1MHz |
More datasheets: 88970314 | 74ALVCH16373T | 74ALVCH16373TX | M4779 SL001 | M4779 SL005 | M4779 SL002 | PI2EQX4402NBE | ZVN2120ASTOB | ZVN2120ASTOA | ZVN2120A |
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