DI9435
Part | Datasheet |
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DI9435T | DI9435T (pdf) |
PDF Datasheet Preview |
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DI9435 SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR • High Cell Density DMOS Technology • Low On-State Resistance • High Power and Current Capability • Fast Switching Speed • High Transient Tolerance 8 765 TOP VIEW 1234 Mechanical Data • SO-8 Plastic Case • Terminal Connections See Outline Drawing and Internal Circuit Diagram above SO-8 Dim Min Max J Nominal P Nominal All Dimensions in mm Maximum Ratings 25°C unless otherwise specified Characteristic Value Unit Drain-Source Voltage VDSS Gate-Source Voltage VGSS ±20 Drain Current Continuous Note 1a Pulsed ±20 Maximum Power Dissipation Note 1a Note 1b Note 1c Operating and Storage Temperature Range Tj, TSTG -55 to +150 Thermal Characteristics Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Symbol RQJA RQJC Value 50 25 Unit °C/W °C/W RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance RQJC + RQCA where the case thermal reference is defined as the solder mounting surface of the drain pins. RQJC in this instance is 25°C/W but is dependent on the specific circuit board thermal design. |
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