DI9435T

DI9435T Datasheet


DI9435

Part Datasheet
DI9435T DI9435T DI9435T (pdf)
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DI9435

SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
• High Cell Density DMOS Technology
• Low On-State Resistance
• High Power and Current Capability
• Fast Switching Speed
• High Transient Tolerance
8 765

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Mechanical Data
• SO-8 Plastic Case
• Terminal Connections See Outline Drawing
and Internal Circuit Diagram above

SO-8

Dim Min Max

J Nominal

P Nominal

All Dimensions in mm

Maximum Ratings 25°C unless otherwise specified

Characteristic

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS
±20

Drain Current

Continuous Note 1a Pulsed
±20

Maximum Power Dissipation

Note 1a

Note 1b

Note 1c

Operating and Storage Temperature Range

Tj, TSTG
-55 to +150

Thermal Characteristics

Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

Note 1a Note 1

Symbol RQJA RQJC

Value 50 25

Unit °C/W °C/W

RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance RQJC + RQCA where the case thermal reference is defined as the solder mounting surface of the drain pins. RQJC in this instance is 25°C/W but is dependent on the specific circuit board
thermal design.
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Datasheet ID: DI9435T 509915