CY7C1347F
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CY7C1347F-133AC (pdf) |
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CY7C1347F-100AC |
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CY7C1347F 4-Mb 128K x 36 Pipelined Sync SRAM Functional Description[1] • Fully registered inputs and outputs for pipelined operation • 128K by 36 common I/O architecture • 3.3V core power supply • 2.5V/3.3V I/O operation • Fast clock-to-output times ns for 250-MHz device ns for 225-MHz device ns for 200-MHz device ns for 166-MHz device ns for 133-MHz device ns for 100-MHz device • User-selectable burst counter supporting interleaved or linear burst sequences • Separate processor and controller address strobes • Synchronous self-timed writes • Asynchronous output enable • JEDEC-standard 100-pin TQFP, 119-pin BGA and 165-pin fBGA packages • “ZZ” Sleep Mode option and Stop Clock option • Available in Industrial and Commercial temperature ranges The CY7C1347F is a 3.3V, 128K by 36 synchronous-pipelined SRAM designed to support zero-wait-state secondary cache with minimal glue logic. CY7C1347F I/O pins can operate at either the 2.5V or the 3.3V level, the I/O pins are 3.3V tolerant when VDDQ = 2.5V. All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise is ns 250-MHz device CY7C1347F supports either the interleaved burst sequence used by the Intel Pentium processor or a linear burst sequence used by processors such as the burst sequence is selected through the MODE pin. Accesses can be initiated by asserting either the Address Strobe from Processor ADSP or the Address Strobe from Controller ADSC at clock rise. Address advancement through the burst sequence is controlled by the ADV input. A 2-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte write operations are qualified with the four Byte Write Select BW[A:D] inputs. A Global Write Enable GW overrides all byte write inputs and writes data to all four bytes. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous Chip Selects CE1, CE2, CE3 and an asynchronous Output Enable OE provide for easy bank selection and output three-state control. In order to provide proper data during depth expansion, OE is masked during the first clock of a read cycle when emerging from a deselected state. Logic Block Diagram A0, A1, A MODE ADV CLK ADSC ADSP BWA BWE GW CE1 CE2 CE3 OE ADDRESS REGISTER A[1:0] BURST COUNTER CLR AND Q0 LOGIC DQD ,DQPD BYTE WRITE REGISTER DQC ,DQPC BYTE WRITE REGISTER DQB ,DQPB BYTE WRITE REGISTER DQA ,DQPA BYTE WRITE REGISTER ENABLE REGISTER PIPELINED ENABLE DQD ,DQPD BYTE WRITE DRIVER DQC ,DQPC BYTE WRITE DRIVER DQB ,DQPB BYTE WRITE DRIVER DQA ,DQPA BYTE WRITE DRIVER MEMORY ARRAY Ordering Information Speed MHz Ordering Code Package Name Package Type CY7C1347F-250AC A101 100-Lead Thin Quad Flat Pack CY7C1347F-250BGC BG119 119-Ball BGA CY7C1347F-225AC A101 100-Lead Thin Quad Flat Pack CY7C1347F-225BGC BG119 119-Ball BGA CY7C1347F-200AC A101 100-Lead Thin Quad Flat Pack CY7C1347F-200BGC BG119 119-Ball BGA CY7C1347F-200BZC BB165C 165-Ball FBGA CY7C1347F-200AI A101 100-Lead Thin Quad Flat Pack CY7C1347F-200BGI BG119 119-Ball BGA CY7C1347F-166AC A101 100-Lead Thin Quad Flat Pack CY7C1347F-166BGC BG119 119-Ball BGA CY7C1347F-166BZC BB165C 165-Ball FBGA CY7C1347F-166AI A101 100-Lead Thin Quad Flat Pack CY7C1347F-166BGI BG119 119-Ball BGA CY7C1347F-133AC A101 100-Lead Thin Quad Flat Pack CY7C1347F-133BGC |
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