CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18
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CY7C11501KV18-400BZXC (pdf) |
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CY7C11481KV18-400BZC |
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CY7C11501KV18-400BZXI |
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CY7C11481KV18-400BZXC |
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CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture Cycle Read Latency • 18-Mbit Density 2M x 8, 2M x 9, 1M x 18, 512K x 36 • 450 MHz Clock for High Bandwidth • 2-word Burst for reducing Address Bus Frequency • Double Data Rate DDR Interfaces data transferred at 900 MHz at 450 MHz • Available in Clock Cycle Latency • Two Input Clocks K and K for Precise DDR Timing SRAM uses rising edges only • Echo Clocks CQ and CQ simplify Data Capture in High Speed Systems • Data Valid Pin QVLD to indicate valid Data on the Output • Synchronous Internally Self Timed Writes • DDR II+ operates with Cycle Read Latency when DOFF is asserted HIGH • Operates similar to DDR I Device with 1 Cycle Read Latency when DOFF is asserted LOW • Core VDD = 1.8V ± 0.1V I/O VDDQ = 1.4V to VDD[1] Supports both 1.5V and 1.8V I/O supply • HSTL Inputs and Variable Drive HSTL Output Buffers • Available in 165-ball FBGA Package 13 x 15 x mm • Offered in both Pb-free and non Pb-free Packages • JTAG compatible Test Access Port • Phase Locked Loop PLL for Accurate Data Placement Configurations With Read cycle latency of cycles CY7C11461KV18 2M x 8 CY7C11571KV18 2M x 9 CY7C11481KV18 1M x 18 CY7C11501KV18 512K x 36 Functional Description The CY7C11461KV18, CY7C11571KV18, CY7C11481KV18, and CY7C11501KV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR II+ architecture. The DDR II+ consists of an SRAM core with advanced synchronous peripheral circuitry. Addresses for read and write are latched on alternate rising edges of the input K clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of K and K. Each address location is associated with two 8-bit words CY7C11461KV18 , 9-bit words CY7C11571KV18 , 18-bit words CY7C11481KV18 , or 36-bit words CY7C11501KV18 that burst sequentially into or out of the device. Asynchronous inputs include an output impedance matching input ZQ . Synchronous data outputs Q, sharing the same physical pins as the data inputs D are tightly matched to the two output echo clocks CQ/CQ, eliminating the need for separately capturing data from each individual DDR SRAM in the system design. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. These devices are down bonded from the 65 nm 72M QDRII+/DDRII+ devices and hence have the same IDD/ISB1 values and JTAG ID code as the equivalent 72M device options. For details refer to the application note AN53189, 65 nm Technology Interim QDRII+/DDRII+ SRAM Device Family Description. Table Selection Guide Maximum Operating Frequency Maximum Operating Current 450 MHz 400 MHz 375 MHz 333 MHz Unit 450 400 375 333 MHz x8 630 580 550 510 mA x9 630 580 550 510 x18 650 590 570 520 x36 820 750 710 640 • San Jose, CA 95134-1709 • 408-943-2600 [+] Feedback Logic Block Diagram CY7C11461KV18 CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 A 19:0 K DOFF Address Register CLK Gen. VREF R/W NWS[1:0] Control Logic Write Reg Write Reg 1M x 8 Array 1M x 8 Array Read Data Reg. Logic Block Diagram CY7C11571KV18 Write Add. Decode Read Add. Decode Ordering Information 26 Package Diagram 26 Sales, Solutions, and Legal Information 27 Worldwide Sales and Design Support 27 Document History 27 Products 27 Page 4 of 28 [+] Feedback CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 Pin Configuration The pin configuration for CY7C11461KV18, CY7C11571KV18, CY7C11481KV18, and CY7C11501KV18 follows.[2] 165-Ball FBGA 13 x 15 x mm Pinout CY7C11461KV18 2M x 8 CQ NC/72M NWS1 K NC/144M LD NC/36M A NC/288M K NWS0 VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ DOFF VREF VDDQ VDDQ VDDQ VDDQ VREF VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ QVLD 11 CQ DQ3 NC DQ2 NC ZQ NC DQ0 NC TDI CY7C11571KV18 2M x 9 CQ NC/72M K NC/144M LD NC/36M CQ Ordering Information The following table contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. For more information, visit the Cypress website at and refer to the product summary page at Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office closest to you, visit us at Table Ordering Information Speed MHz Ordering Code 400 CY7C11481KV18-400BZC CY7C11481KV18-400BZXC CY7C11501KV18-400BZXC CY7C11501KV18-400BZXI Package Diagram Package Type Operating Range 51-85180 165-Ball Fine Pitch Ball Grid Array 13 x 15 x mm Commercial 165-Ball Fine Pitch Ball Grid Array 13 x 15 x mm Pb-free 51-85180 165-Ball Fine Pitch Ball Grid Array 13 x 15 x mm Pb-free Industrial Package Diagram Figure 165-Ball FBGA 13 x 15 x mm , 51-85180 TOP VIEW PIN 1 CORNER 1 2 3 4 5 6 7 8 9 10 11 A B C D E F G H J K L M N P R SEATING PLANE C MAX. C BOTTOM VIEW PIN 1 CORNER M C M C A B 165X 11 10 9 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R 0.15 4X NOTES : SOLDER PAD TYPE NON-SOLDER MASK DEFINED NSMD PACKAGE WEIGHT 0.475g JEDEC REFERENCE MO-216 / ISSUE E PACKAGE CODE BB0AC 51-85180-*C Page 26 of 28 [+] Feedback CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 Document History Page Document Title 18-Mbit DDR II+ SRAM 2-Word Burst Architecture Cycle Read Latency Document Number 001-53198 Orig of Change Submission Date Description of Change ** 2702744 VKN/PYRS 05/06/09 New datasheet *A 2747707 VKN/AESA 08/03/2009 Converted from preliminary to final For 450MHz speed, changed tCO, tCCQO, tCHZ from 370ps to 450ps and tDOH, tCQOH, tCLZ from -370ps to -450ps Included Soft Error Immunity Data Modified Ordering Information table by including parts that are available and modified the disclaimer for the Ordering information *B 2761928 AJU 09/10/2009 Post to external web *C 2767155 VKN 09/23/2009 Changed Input Capacitance CIN from 2 pF to 4 pF Changed Output Capacitance CO from 3 pF to 4 pF Modified Ordering code disclaimer *D 2813347 VKN/AESA 11/23/2009 Included CY7C11501KV18-400BZXC & CY7C11501KV18-400BZXI part in the Ordering information table *E 2855911 VKN 01/18/2010 Included “CY7C11481KV18-400BZXC” part in the Ordering information table Updated package outline diagram Page 27 of 28 [+] Feedback CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive Clocks & Buffers Interface Lighting & Power Control Memory Optical & Image Sensing PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/automotive cypress.com/go/clocks cypress.com/go/interface cypress.com/go/powerpsoc cypress.com/go/plc cypress.com/go/memory cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless PSoC Solutions psoc.cypress.com/solutions PSoC 1 | PSoC 3 | PSoC 5 Cypress Semiconductor Corporation, The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code software and/or firmware is owned by Cypress Semiconductor Corporation Cypress and is protected by and subject to worldwide patent protection United States and foreign , United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Page 28 of 28 QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this document are the trademarks of their respective holders. [+] Feedback |
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