FQPF32N12V2

FQPF32N12V2 Datasheet

FQP32N12V2/FQPF32N12V2

Part	Datasheet
FQPF32N12V2	FQPF32N12V2 (pdf)

Related Parts	Information
FQP32N12V2	FQP32N12V2

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FQP32N12V2/FQPF32N12V2 FQP32N12V2/FQPF32N12V2 120V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds on is required. • 32 A, 120V, RDS on = = 10 V • Low gate charge typical 41 nC • Low Crss typical 70 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-220 FQP Series TO-220F FQPF Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 VGSS Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 dv/dt Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. FQP32N12V2 FQPF32N12V2 128 * ± 30 -55 to +175 Units V A V mJ A mJ V/ns W

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FQP32N12V2/FQPF32N12V2

FQP32N12V2/FQPF32N12V2
120V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds on is required.
• 32 A, 120V, RDS on = = 10 V
• Low gate charge typical 41 nC
• Low Crss typical 70 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-220

FQP Series

TO-220F

FQPF Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Parameter

VDSS

Drain-Source Voltage

Drain Current - Continuous TC = 25°C
- Continuous TC = 100°C

Drain Current - Pulsed

Note 1

VGSS

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1
dv/dt

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

FQP32N12V2 FQPF32N12V2
128 *
± 30
-55 to +175

Units V A V mJ A mJ

V/ns W

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Datasheet ID: FQPF32N12V2 515311