CPMF-1200-S080B
CPMF-1200-S080B Datasheet
CPMF-1200-S080B
| Part | Datasheet |
|---|---|
CPMF-1200-S080B |
CPMF-1200-S080B (pdf) |
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| CPMF-1200-S080B Z-FeTTM Silicon Carbide MOSFET N-Channel Enhancement Mode Bare Die VDS RDS on Qg = 1200 V = 80 = nC Package • Industry Leading RDS on • High Speed Switching • Low Capacitances • Easy to Parallel • Simple to Drive • Lead-Free Benefits • Higher System Efficiency • Reduced Cooling Requirements • Avalanche Ruggedness • Increase System Switching Frequency Applications • Solar Inverters • Motor Drives • Military and Aerospace Maximum Ratings GG SS Part Number CPMF-1200-S080B Package DIE Parameter Value Unit Test Conditions Note Continuous Drain Current IDpulse Pulsed Drain Current Single Pulse Avalanche Energy Repetitive Avalanche Energy A Pulse width tP limited by Tjmax TJ = tp = 1ms J ID = 20A, VDD = 50 V, L = mH J tAR limited by Tjmax Repetitive Avalanche Current A ID = 20A, VDD = 50 V, L = 3 mH tAR limited by Tjmax VGS Gate Source Voltage -5/+25 V Ptot Power Dissipation TJ , Tstg Operating Junction and Storage Temperature -55 to +150 Solder Temperature 1.6mm from case for 10s Note: Assumes a thermal resistance junction to case of °C/W. Electrical Characteristics Parameter V BR DSS Drain-Source Breakdown Voltage VGS th Gate Threshold Voltage Min. 1200 |
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