CMF20120D
CMF20120D Datasheet
CMF20120D-Silicon Carbide Power MOSFET VDS
| Part | Datasheet |
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CMF20120D |
CMF20120D (pdf) |
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| CMF20120D-Silicon Carbide Power MOSFET VDS 1200 V Z-FeTTM MOSFET ID MAX N-Channel Enhancement Mode RDS o n Features • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS on • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased System Switching Frequency Applications • Solar Inverters • High Voltage DC/DC Converters • Motor Drives • Switch Mode Power Supplies • UPS Package TO-247-3 Part Number CMF20120D Package TO-247-3 Maximum Ratings TC = unless otherwise specified Parameter Value Unit Test Conditions Note Continuous Drain Current IDpulse Pulsed Drain Current Single Pulse Avalanche Energy Repetitive Avalanche Energy A Pulse width tP limited by Tjmax J ID = 20A, VDD = 50 V, L = mH J tAR limited by Tjmax Fig. 10 Fig. 15 Repetitive Avalanche Current A ID = 20A, VDD = 50 V, L = 3 mH tAR limited by Tjmax VGS Gate Source Voltage -5/+25 V Ptot Power Dissipation TJ , Tstg Operating Junction and Storage Temperature Solder Temperature Mounting Torque -55 to +135 Fig. 9 1.6mm from case for 10s Nm lbf-in M3 or 6-32 screw Electrical Characteristics TC = unless otherwise specified |
| More datasheets: B88069X5010S102 | M3475 SL001 | M3475 SL005 | M3475 SL002 | M5674 SL005 | M5674 SL001 | M5674 SL002 | 190-2255 | TIP3055-S | 17000186A |
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