CMF20120D

CMF20120D Datasheet


CMF20120D-Silicon Carbide Power MOSFET VDS

Part Datasheet
CMF20120D CMF20120D CMF20120D (pdf)
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CMF20120D-Silicon Carbide Power MOSFET VDS
1200 V

Z-FeTTM MOSFET

ID MAX

N-Channel Enhancement Mode RDS o n

Features
• High Speed Switching with Low Capacitances
• High Blocking Voltage with Low RDS on
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant Benefits
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased System Switching Frequency

Applications
• Solar Inverters
• High Voltage DC/DC Converters
• Motor Drives
• Switch Mode Power Supplies
• UPS

Package

TO-247-3

Part Number CMF20120D

Package TO-247-3

Maximum Ratings TC = unless otherwise specified

Parameter

Value Unit

Test Conditions

Note

Continuous Drain Current

IDpulse Pulsed Drain Current

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

A Pulse width tP limited by Tjmax

J ID = 20A, VDD = 50 V,

L = mH

J tAR limited by Tjmax

Fig. 10 Fig. 15

Repetitive Avalanche Current

A ID = 20A, VDD = 50 V, L = 3 mH
tAR limited by Tjmax

VGS Gate Source Voltage
-5/+25 V

Ptot

Power Dissipation

TJ , Tstg Operating Junction and Storage Temperature

Solder Temperature

Mounting Torque
-55 to +135

Fig. 9
1.6mm from case for 10s

Nm lbf-in

M3 or 6-32 screw

Electrical Characteristics TC = unless otherwise specified
More datasheets: B88069X5010S102 | M3475 SL001 | M3475 SL005 | M3475 SL002 | M5674 SL005 | M5674 SL001 | M5674 SL002 | 190-2255 | TIP3055-S | 17000186A


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Datasheet ID: CMF20120D 506997