TIP3055-S
TIP3055-S Datasheet
TIP3055 NPN SILICON POWER TRANSISTOR
| Part | Datasheet |
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TIP3055-S |
TIP3055-S (pdf) |
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| TIP3055 NPN SILICON POWER TRANSISTOR ● Designed for Complementary Use with the TIP2955 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING VALUE UNIT Collector-base voltage IE = 0 VCBO OBSOLETE Collector-emitter voltage IB = 0 see Note 1 Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range Storage temperature range Lead temperature mm from case for 10 seconds VCER VEBO IC IB Ptot Tj Tstg TL -65 to +150 -65 to +150 NOTES This value applies when the base-emitter resistance RBE = 100 Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = A, RBE = 100 VBE off = 0, RS = VCC = 10 V. PRODUCT INFORMATION TIP3055 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX Collector-emitter V BR CEO breakdown voltage IC = 30 mA IB = 0 see Note 5 Collector-emitter ICER cut-off current VCE = 70 V RBE = 100 Collector cut-off ICEO current VCE = 30 V IB = 0 Voltage between ICEV base and emitter |
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