MSA-1110

MSA-1110 Datasheet

MSA-1110 Cascadable Silicon Bipolar MMIC Amplifier

Part	Datasheet
MSA-1110	MSA-1110 (pdf)

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MSA-1110 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet The MSA-1110 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic high reliability package. This MMIC is designed for high dynamic range in either 50 or 75Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. • High Dynamic Range Cascadable 50Ω or 75Ω Gain Block • 3 dB Bandwidth 50 MHz to GHz • dBm Typical P1 dB at GHz • 12 dB Typical 50 Ω Gain at GHz • dB Typical Noise Figure at GHz • Hermetic Gold-ceramic Microstrip Package 100 mil Package R bias Typical Biasing Configuration VCC > 8 V C block IN 3 1 MSA RFC Optional C block Vd = V IFD-53010 pkg MSA-1110 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current Power Dissipation[2,3] 90 mA 560 mW RF Input Power +13 dBm Junction Temperature 200°C Storage Temperature to 200°C Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at mW/°C for TC > 124°C. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. Thermal Resistance[2, 4] = 135°C/W Electrical Specifications[1], TA = 25°C Symbol GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions Id = 60 mA, ZO = 50 Ω Units Min. Power Gain \|S21\| 2 Gain Flatness f = GHz f = to GHz 3 dB Bandwidth[2] Input VSWR f = to GHz Output VSWR f = to GHz Ordering Information Part Numbers MSA-1110 No. of Devices 100 Comments Bulk 100 mil Package Dimensions GROUND RF INPUT RF OUTPUT AND BIAS 2 GROUND unless otherwise specified Dimensions are in Tolerances in .xxx = mm .xx = For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2747EN AV02-1233EN - May 29, 2008

PDF Datasheet Preview

MSA-1110 Cascadable Silicon Bipolar MMIC Amplifier

Data Sheet

The MSA-1110 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic high reliability package. This MMIC is designed for high dynamic range in either 50 or 75Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems.

The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
• High Dynamic Range Cascadable 50Ω or 75Ω Gain Block
• 3 dB Bandwidth 50 MHz to GHz
• dBm Typical P1 dB at GHz
• 12 dB Typical 50 Ω Gain at GHz
• dB Typical Noise Figure at GHz
• Hermetic Gold-ceramic Microstrip Package
100 mil Package

R bias

Typical Biasing Configuration

VCC > 8 V

C block IN
3 1 MSA

RFC Optional

C block Vd = V

IFD-53010 pkg

MSA-1110 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current Power Dissipation[2,3]
90 mA 560 mW

RF Input Power
+13 dBm

Junction Temperature 200°C

Storage Temperature
to 200°C

Permanent damage may occur if any of these limits are exceeded.

TCASE = 25°C. Derate at mW/°C for TC > 124°C. The small spot size of this technique results in a higher, though more accurate determination
of than do alternate methods.

Thermal Resistance[2, 4] = 135°C/W

Electrical Specifications[1], TA = 25°C

Symbol GP f3 dB

VSWR

NF P1 dB IP3 tD Vd dV/dT

Parameters and Test Conditions Id = 60 mA, ZO = 50 Ω

Units Min.

Power Gain |S21| 2 Gain Flatness
f = GHz f = to GHz
3 dB Bandwidth[2]

Input VSWR
f = to GHz

Output VSWR
f = to GHz
Ordering Information

Part Numbers MSA-1110

No. of Devices 100

Comments Bulk
100 mil Package Dimensions

GROUND

RF INPUT

RF OUTPUT AND BIAS
2 GROUND
unless otherwise specified

Dimensions are in

Tolerances
in .xxx =
mm .xx =

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2747EN AV02-1233EN - May 29, 2008

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MSA-1110 Datasheet file may be downloaded here without warranties.

Datasheet ID: MSA-1110 520484