MSA-0470

MSA-0470 Datasheet

MSA-0470 Cascadable Silicon Bipolar MMIC Amplifier

Part	Datasheet
MSA-0470	MSA-0470 (pdf)

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MSA-0470 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet The MSA-0470 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial military applications. The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. • Cascadable 50Ω Gain Block • 3 dB Bandwidth DC to GHz • dBm Typical P1 dB at GHz • dB Typical Gain at GHz • Unconditionally Stable k>1 • Hermetic Gold-ceramic Microstrip Package 70 mil Package Typical Biasing Configuration Rbias VCC > 7 V Cblock IN 3 1 MSA RFC Optional Cblock Vd = V MSA-0470 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature 100 mA 650 mW +13 dBm 200°C to 200°C Notes Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at mW/°C for TC > 125°C. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. Thermal Resistance[2,4] = 115°C/W Electrical Specifications[1], TA = 25°C GP f3 dB VSWR Parameters and Test Conditions Id = 50 mA, ZO = 50 Ω Power Gain \|S21\| 2 f = GHz Gain Flatness f = to GHz Units Min. dB 3 dB Bandwidth Input VSWR f = to GHz Output VSWR f = to GHz 50 Ω Noise Figure f = GHz P1 dB Output Power at 1 dB Gain Compression f = GHz Third Order Intercept Point f = GHz Ordering Information Part Numbers MSA-0470 No. of Devices 100 Comments Bulk 70 mil Package Dimensions GROUND RF INPUT RF OUTPUT AND BIAS ± ± 2 GROUND unless otherwise specified Dimensions are in Tolerances in .xxx = ± mm .xx = ± For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2764EN AV02-1226EN - May 14, 2008

PDF Datasheet Preview

MSA-0470 Cascadable Silicon Bipolar MMIC Amplifier

Data Sheet

The MSA-0470 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial military applications.

The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
• Cascadable 50Ω Gain Block
• 3 dB Bandwidth DC to GHz
• dBm Typical P1 dB at GHz
• dB Typical Gain at GHz
• Unconditionally Stable k>1
• Hermetic Gold-ceramic Microstrip Package
70 mil Package

Typical Biasing Configuration

Rbias

VCC > 7 V

Cblock IN
3 1 MSA

RFC Optional

Cblock Vd = V

MSA-0470 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature
100 mA 650 mW +13 dBm 200°C to 200°C

Notes Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at mW/°C for TC > 125°C. The small spot size of this technique results in a higher, though more accurate determination
of than do alternate methods.

Thermal Resistance[2,4] = 115°C/W

Electrical Specifications[1], TA = 25°C

GP f3 dB VSWR

Parameters and Test Conditions Id = 50 mA, ZO = 50 Ω

Power Gain |S21| 2
f = GHz

Gain Flatness
f = to GHz

Units Min. dB
3 dB Bandwidth

Input VSWR
f = to GHz

Output VSWR
f = to GHz
50 Ω Noise Figure
f = GHz

P1 dB

Output Power at 1 dB Gain Compression
f = GHz

Third Order Intercept Point
f = GHz
Ordering Information

Part Numbers MSA-0470

No. of Devices 100

Comments Bulk
70 mil Package Dimensions

GROUND

RF INPUT

RF OUTPUT AND BIAS
± ±
2 GROUND
unless otherwise specified

Dimensions are in

Tolerances
in .xxx = ±
mm .xx = ±

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2764EN AV02-1226EN - May 14, 2008

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MSA-0470 Datasheet file may be downloaded here without warranties.

Datasheet ID: MSA-0470 520464