BLF8G20LS-140VU

BLF8G20LS-140VU Datasheet

BLF8G20LS-140V BLF8G20LS-140GV

Part	Datasheet
BLF8G20LS-140VU	BLF8G20LS-140VU (pdf)

Related Parts	Information
BLF8G20LS-140VJ	BLF8G20LS-140VJ

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BLF8G20LS-140V BLF8G20LS-140GV Power LDMOS transistor Product profile 140 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal VDS PL AV Gp ACPR5M mA V W dB % dBc 2-carrier W-CDMA 1805 to 1880 900 28 35 32 [1] [1] Test signal 3GPP test model 1 64 DPCH PAR = dB at % probability on CCDF per carrier 5 MHz carrier spacing. Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Decoupling leads to enable improved video bandwidth 150 MHz typical Designed for broadband operation 1805 MHz to 1990 MHz Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to 1990 MHz frequency range BLF8G20LS-140 G V Power LDMOS transistor Pinning information Table Pinning Simplified outline BLF8G20LS-140V SOT1244B drain gate source decoupling lead decoupling lead n.c. n.c. BLF8G20LS-140GV SOT1244C drain gate source decoupling lead decoupling lead n.c. n.c. [1] Connected to flange. Ordering information Graphic symbol aaa-003619 aaa-003619 Table Ordering information Type number Package Name Description BLF8G20LS-140V earless flanged ceramic package 6 leads BLF8G20LS-140GV - earless flanged ceramic package 6 leads Version SOT1244B SOT1244C Limiting values Table Limiting values In accordance with the Absolute Maximum Rating System IEC Symbol Parameter Conditions drain-source voltage gate-source voltage Tstg storage temperature junction temperature Min [1] - Max 65 +13 +150 225 Unit V C C [1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. BLF8G20LS-140V_20LS-140GV#3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. All rights reserved. 2 of 17 BLF8G20LS-140 G V Power LDMOS transistor Thermal characteristics Table Symbol Rth j-c Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C PL = 35 W Characteristics Typ Unit K/W Table DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V BR DSS VGS th VGSq drain-source breakdown voltage gate-source threshold voltage gate-source quiescent voltage IDSS drain leakage current IDSX Ordering information 2 Limiting values. 2 Thermal characteristics 3 Characteristics 3 Test information 3 Ruggedness in class-AB operation 3 Impedance information 4 VBW in a class-AB operation 5 Test circuit. 6 Graphical data 7 Pulsed CW 7 IS-95 8 1-Carrier W-CDMA 9 2-Carrier W-CDMA 10 Package outline 12 Handling information. 14 Abbreviations 14 Legal information. 15 Data sheet status 15 Definitions 15 Disclaimers 15 Trademarks. 16 Contact information. 16 Contents 17 BLF8G20LS-140 G V Power LDMOS transistor Please be aware that important notices concerning this document and the product s described herein, have been included in section ‘Legal information’. Ampleon The Netherlands B.V. All rights reserved. For more information, please visit For sales office addresses, please visit: Date of release 1 September 2015 Document identifier BLF8G20LS-140V_20LS-140GV#3

PDF Datasheet Preview

BLF8G20LS-140V BLF8G20LS-140GV

Power LDMOS transistor

Product profile
140 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.

Table Typical performance

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Test signal

VDS PL AV Gp

ACPR5M
mA V W
dB % dBc
2-carrier W-CDMA
1805 to 1880
900 28 35
32 [1]
[1] Test signal 3GPP test model 1 64 DPCH PAR = dB at % probability on CCDF per carrier 5 MHz carrier spacing.

Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Decoupling leads to enable improved video bandwidth 150 MHz typical Designed for broadband operation 1805 MHz to 1990 MHz Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to 1990 MHz frequency range

BLF8G20LS-140 G V

Power LDMOS transistor

Pinning information

Table Pinning

Simplified outline

BLF8G20LS-140V SOT1244B
drain
gate
source
decoupling lead
decoupling lead
n.c.
n.c.

BLF8G20LS-140GV SOT1244C
drain
gate
source
decoupling lead
decoupling lead
n.c.
n.c.
[1] Connected to flange.
Ordering information

Graphic symbol
aaa-003619
aaa-003619
Table Ordering information

Type number

Package

Name Description

BLF8G20LS-140V
earless flanged ceramic package 6 leads

BLF8G20LS-140GV -
earless flanged ceramic package 6 leads

Version SOT1244B SOT1244C

Limiting values

Table Limiting values In accordance with the Absolute Maximum Rating System IEC

Symbol Parameter

Conditions
drain-source voltage
gate-source voltage

Tstg
storage temperature
junction temperature

Min [1] -

Max 65 +13 +150 225

Unit V C C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator.

BLF8G20LS-140V_20LS-140GV#3

All information provided in this document is subject to legal disclaimers.

Ampleon The Netherlands B.V. All rights reserved.
2 of 17

BLF8G20LS-140 G V

Power LDMOS transistor

Thermal characteristics

Table Symbol Rth j-c

Thermal characteristics Parameter thermal resistance from junction to case

Conditions Tcase = 80 C PL = 35 W

Characteristics

Typ Unit K/W

Table DC characteristics Tj = 25 C unless otherwise specified.

Symbol Parameter

V BR DSS VGS th VGSq
drain-source breakdown voltage gate-source threshold voltage gate-source quiescent voltage

IDSS
drain leakage current

IDSX
Ordering information 2

Limiting values. 2

Thermal characteristics 3

Characteristics 3

Test information 3 Ruggedness in class-AB operation 3 Impedance information 4 VBW in a class-AB operation 5 Test circuit. 6 Graphical data 7 Pulsed CW 7 IS-95 8 1-Carrier W-CDMA 9 2-Carrier W-CDMA 10

Package outline 12

Handling information. 14

Abbreviations 14

Legal information. 15 Data sheet status 15 Definitions 15 Disclaimers 15 Trademarks. 16

Contact information. 16

Contents 17

BLF8G20LS-140 G V

Power LDMOS transistor

Please be aware that important notices concerning this document and the product s described herein, have been included in section ‘Legal information’.

Ampleon The Netherlands B.V.

All rights reserved.

For more information, please visit For sales office addresses, please visit:

Date of release 1 September 2015

Document identifier BLF8G20LS-140V_20LS-140GV#3

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BLF8G20LS-140VU Datasheet file may be downloaded here without warranties.

Datasheet ID: BLF8G20LS-140VU 517635