HSCH-5512

HSCH-5512 Datasheet

HSCH-55XX Beam Lead Schottky Diode Pairs for Mixers and Detectors

Part	Datasheet
HSCH-5512	HSCH-5512 (pdf)

Related Parts	Information
HSCH-5531	HSCH-5531

PDF Datasheet Preview
HSCH-55XX Beam Lead Schottky Diode Pairs for Mixers and Detectors Data Sheet These dual beam lead diodes are constructed using a metal-semiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift. The Avago beam lead process allows for large beam anchor pads for rugged construction typical 6 gram pull strength without degrading capacitance. • Monolithic Pair Closely Matched Electrical Parameters • Low Capacitance pF Maximum at 0 Volts • Low Noise Figure Typical dB at 26 GHz • Rugged Construction 4 Grams Minimum Lead Pull • Platinum Tri-Metal System High Temperature Stability • Polyimide Scratch • Silicon Nitride Passivation Stable, Reliable Performance The beam lead diode is ideally suited for use in stripline or microstrip or coplanar circuits. Its small physical size and uniform dimensions give it low parasitics and repeatable RF characteristics through These dual beam leads are intended for use in balanced mixers and in even harmonic anti-parallel pair mixers. By using several of these devices in the proper configuration it is easy to assemble bridge quads, star quads, and ring quads for Class I, II, or III type double balanced mixers. Outline 04B 220 180 120 90 CATHODE GOLD BEAMS GLASS 540 480 220 180 250 200 190 160 Assembly Techniques Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information see Application Note 979, “The Handling and Bonding of Beam Lead Devices Made Easy,” or Application Note 993, “Beam Lead Device Bonding to Soft Substrates.” 8 Min. PLATINUM METALLIZATION CATHODE GLASS 60 40 ANODE GLASS DIMENSIONS IN m 1/1000 inch Maximum Ratings for Each Diode Pulse Power Incident at TA = 1 W Pulse Width = 1 µs, Du = CW Power Dissipation at TA = 150 mW Measured in an infinite heat sink derated linearly to zero at maximum rated temperature TOPR Operating Temperature Range. -65°C to +175 °C TSTG Storage Temperature -65°C to +200°C Minimum Lead grams pull on any lead Diode Mounting 350°C for 10 sec. max. These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. Electrical Specifications for DC Tested Diodes at TA = 25°C Part Number HSCH-[1] Barrier 5512 Medium 5531 Test Conditions Minimum Breakdown Voltage VBR V IR = 10 µA Maximum Dynamic Resistance Max. IF = 5 mA

PDF Datasheet Preview

HSCH-55XX Beam Lead Schottky Diode Pairs for Mixers and Detectors

Data Sheet

These dual beam lead diodes are constructed using a metal-semiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.

The Avago beam lead process allows for large beam anchor pads for rugged construction typical 6 gram pull strength without degrading capacitance.
• Monolithic Pair Closely Matched Electrical Parameters
• Low Capacitance pF Maximum at 0 Volts
• Low Noise Figure Typical dB at 26 GHz
• Rugged Construction 4 Grams Minimum Lead Pull
• Platinum Tri-Metal System High Temperature Stability
• Polyimide Scratch
• Silicon Nitride Passivation Stable, Reliable Performance

The beam lead diode is ideally suited for use in stripline or microstrip or coplanar circuits. Its small physical size and uniform dimensions give it low parasitics and repeatable RF characteristics through

These dual beam leads are intended for use in balanced mixers and in even harmonic anti-parallel pair mixers. By using several of these devices in the proper configuration it is easy to assemble bridge quads, star quads, and ring quads for Class I, II, or III type double balanced mixers.

Outline 04B
220 180
120 90

CATHODE

GOLD BEAMS

GLASS
540 480
220 180
250 200
190 160

Assembly Techniques

Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information see Application Note 979, “The Handling and Bonding of Beam Lead Devices Made Easy,” or Application Note 993, “Beam Lead Device Bonding to Soft Substrates.”
8 Min.

PLATINUM METALLIZATION

CATHODE

GLASS
60 40

ANODE

GLASS DIMENSIONS IN m 1/1000 inch

Maximum Ratings for Each Diode Pulse Power Incident at TA = 1 W Pulse Width = 1 µs, Du = CW Power Dissipation at TA = 150 mW Measured in an infinite heat sink derated linearly to zero at maximum rated temperature TOPR Operating Temperature Range. -65°C to +175 °C TSTG Storage Temperature -65°C to +200°C Minimum Lead grams pull on any lead Diode Mounting 350°C for 10 sec. max.

These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode.

Electrical Specifications for DC Tested Diodes at TA = 25°C

Part Number HSCH-[1]

Barrier
5512

Medium
5531

Test Conditions

Minimum Breakdown

Voltage VBR V

IR = 10 µA

Maximum Dynamic Resistance

Max.

IF = 5 mA

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Datasheet ID: HSCH-5512 520392