AT16L64A6SQC4M

AT16L64A6SQC4M Datasheet

ATPAT16L64A6SQC4M

Part	Datasheet
AT16L64A6SQC4M	AT16L64A6SQC4M (pdf)

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Electronics, Inc. 2590 North First Street, San Jose, CA 95131, U.S.A. Tel 408-732-5000 Fax 408-732-5055 ATPAT16L64A6SQC4M 128MB DDR-400 UNBUFFERED NON-ECC SODIMM DESCRIPTION The ATP AT16L64A6SQC4M is a high performance 128MB DDR-400 Unbuffered NON-ECC SDRAM memory module. It is organized as 16M x 64 in a 200-pin Small Outline Dual-In-Line Memory Module SODIMM package. The module utilizes four 16Mx16 DDR SDRAMs in TSOP-II package. The module consists of a 256-byte serial EEPROM, which contains the module configuration information. KEY FEATURES • High Density 128MB 16M x 64 • DIMM Rank 1 Rank • Cycle Time 5ns 200MHz • CAS Latency 3 • Double-data rate architecture two data transfers per clock cycle • Power supply 2.5V ± 0.2V • RoHS compliant • Burst lengths 2, 4, 8 • Auto & Self refresh • refresh interval 8K/64ms refresh • SSTL_2 Interface • PCB Height inches • Minimum Thickness of Golden Finger 30 Micro-inch Part No. AT16L64A6SQC4M Max Freq 200MHz x2 Interface SSTL_2 PIN DESCRIPTION Pin Name Description A0~A12 Address bus BA0~BA1 Bank select DQ0~DQ63 Memory data bus WE CS0 CKE0 Row address strobe Column address strobe Write strobe Chip select lines Clock enable lines DQS0~DQS7 Low data strobes No Connection Do Not Useable Pin Name CK0~CK1 CK0 ~ CK1 SCL SDA SA0-SA2 VDD VDDQ VREF VSS VDDSPD DM0~DM7 Description Clock Positive line of differential pair Clock negative line of differential IIC serial bus clock for EEPROM IIC serial bus data line for EEPROM IIC slave address select for EEPROM Positive power supply I/O Driver positive power supply I/O reference supply Power supply return ground EEPROM positive power supply 2.5V Input data mask Your Ultimate Memory Solution! Page 1 of 7 ATP AT16L64A6SQC4M PIN ASSIGNMENT No. Designation VREF DQS0 DQS1 DQ10 DQ11 DQ16 DQ17

PDF Datasheet Preview

Electronics, Inc.
2590 North First Street, San Jose, CA 95131, U.S.A.

Tel 408-732-5000 Fax 408-732-5055

ATPAT16L64A6SQC4M
128MB DDR-400 UNBUFFERED NON-ECC SODIMM

DESCRIPTION The ATP AT16L64A6SQC4M is a high performance 128MB DDR-400 Unbuffered NON-ECC SDRAM memory module. It is organized as 16M x 64 in a 200-pin Small Outline Dual-In-Line Memory Module SODIMM package. The module utilizes four 16Mx16 DDR SDRAMs in TSOP-II package. The module consists of a 256-byte serial EEPROM, which contains the module configuration information.

KEY FEATURES
• High Density 128MB 16M x 64
• DIMM Rank 1 Rank
• Cycle Time 5ns 200MHz
• CAS Latency 3
• Double-data rate architecture two data
transfers per clock cycle
• Power supply 2.5V ± 0.2V
• RoHS compliant
• Burst lengths 2, 4, 8
• Auto & Self refresh
• refresh interval 8K/64ms refresh
• SSTL_2 Interface
• PCB Height inches
• Minimum Thickness of Golden Finger 30

Micro-inch

Part No. AT16L64A6SQC4M

Max Freq 200MHz x2

Interface SSTL_2

PIN DESCRIPTION

Pin Name Description

A0~A12

Address bus

BA0~BA1

Bank select

DQ0~DQ63

Memory data bus

WE CS0 CKE0

Row address strobe Column address strobe Write strobe Chip select lines Clock enable lines

DQS0~DQS7 Low data strobes

No Connection

Do Not Useable

Pin Name CK0~CK1

CK0 ~ CK1 SCL SDA SA0-SA2 VDD VDDQ VREF VSS VDDSPD DM0~DM7

Description Clock Positive line of differential pair Clock negative line of differential IIC serial bus clock for EEPROM IIC serial bus data line for EEPROM IIC slave address select for EEPROM Positive power supply I/O Driver positive power supply I/O reference supply Power supply return ground EEPROM positive power supply 2.5V Input data mask

Your Ultimate Memory Solution!

Page 1 of 7

ATP AT16L64A6SQC4M

PIN ASSIGNMENT

No. Designation

VREF

DQS0

DQS1

DQ10

DQ11

DQ16

DQ17

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Datasheet ID: AT16L64A6SQC4M 519550