HEMT-3301
HEMT-3301 Datasheet
HEMT-3301/HEMT-1001 940 nm High Radiant Emitters
| Part | Datasheet |
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HEMT-3301 |
HEMT-3301 (pdf) |
| PDF Datasheet Preview |
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| HEMT-3301/HEMT-1001 940 nm High Radiant Emitters Data Sheet The HEMT-3301 and HEMT-1001are infrared emitters, using amesa structure GaAs on GaAs infrared diode, IRED, optimized for maximum quantum efficiency at a peak wavelength of 940 nm. The HEMT-3301 and HEMT1001emitters are untinted, undiffused plastic packages with medium wide radiation patterns. These medium-wide and wide radiation patterns eliminate the beam focusing problems that are encountered with emitters that have narrow radiation patterns. Applications include optical transducers, optical part counters, smoke detectors, covert identification, paper tape and card readers, and optical encoders. • Nonsaturating, High Radiant Flux Output • Efficient at Low Currents, Combined with High Current Capability • Three Package Styles • Operating Temperature Range -40°C to +100°C • Medium-Wide Radiation Patterns • Radiated Spectrum Matches Response of Silicon Photodetectors Package Dimensions Absolute Maximum Ratings at TA = 25°C Min. Typ. Power Dissipation DC Forward Current Peak Forward Current 1000 IRED Junction Temperature Operating Temperature -40 Storage Temperature Lead Soldering Temperature Max. +100 +100 Units mW mA °C °C °C for 5 seconds Notes Derate as specified in Figure 6 Time average current as determined from Figure 7 mm in. from emitter body Electrical/Optical Characteristics at TA = 25°C Symbol Description Min. Typ. Max. Units Test Conditions Fig. Radiant Intensity HEMT-3301 HEMT-1001 mW/sr IF = 20 mA DIe/DT Dl/DT lPEAK Temperature Coefficient for Radiant Intensity[1] Temperature Coefficient for Peak Wavelength[2] |
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