TISP3072F3P

TISP3072F3P Datasheet

TISP3072F3,TISP3082F3

Part	Datasheet
TISP3072F3P	TISP3072F3P (pdf)

Related Parts	Information
TISP3072F3SL	TISP3072F3SL
TISP3082F3P	TISP3082F3P
TISP3082F3SL	TISP3082F3SL

PDF Datasheet Preview
TISP3072F3,TISP3082F3 LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP30xxF3 LV Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE VDRM V BO ‘3072F3 ‘3082F3 Planar Passivated Junctions Low Off-State Current <10 µA Rated for International Surge Wave Shapes Waveshape Standard ITSP 2/10 µs GR-1089-CORE 80 8/20 µs IEC 61000-4-5 10/160 µs FCC Part 68 10/700 µs ITU-T K.20/21 50 FCC Part 68 10/560 µs FCC Part 68 10/1000 µs GR-1089-CORE 35 UL Recognized Component Description These low-voltage dual bidirectional thyristor protectors are designed to protect ISDN applications against transients caused by lightning strikes and a.c. power lines. Offered in two voltage variants to meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. Transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. D Package Top View T1 NC 2 NC 3 8G 7G 6G 5G NC - No internal connection P Package Top View T1 G2 8T 7G G3 R4 6G 5R Specified T terminal ratings require connection of pins 1 and Specified R terminal ratings require connection of pins 4 and SL Package Top View MD1XAB Device Symbol How To Order

PDF Datasheet Preview

TISP3072F3,TISP3082F3

LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

TISP30xxF3 LV Overvoltage Protector Series

Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

DEVICE

VDRM V BO
‘3072F3 ‘3082F3

Planar Passivated Junctions Low Off-State Current <10 µA

Rated for International Surge Wave Shapes

Waveshape

Standard

ITSP
2/10 µs

GR-1089-CORE 80
8/20 µs

IEC 61000-4-5
10/160 µs

FCC Part 68
10/700 µs

ITU-T K.20/21 50

FCC Part 68
10/560 µs

FCC Part 68
10/1000 µs GR-1089-CORE 35

UL Recognized Component

Description These low-voltage dual bidirectional thyristor protectors are designed to protect ISDN applications against transients caused by lightning strikes and a.c. power lines. Offered in two voltage variants to meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. Transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides.

These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.

D Package Top View

T1 NC 2 NC 3
8G 7G 6G 5G

NC - No internal connection

P Package Top View

T1 G2
8T 7G

G3 R4
6G 5R

Specified T terminal ratings require connection of pins 1 and Specified R terminal ratings require connection of pins 4 and

SL Package Top View

MD1XAB

Device Symbol

How To Order

More datasheets: FQB32N20CTM | 1514 | KIT0051 | B66453K0000X608 | DPB-4760 | AS3605-BQFP-03 | AS3605-BQFP-FF | S558-5999-N3-F | TISP3072F3SL | TISP3082F3P

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Datasheet ID: TISP3072F3P 522313