FQB32N20CTM

FQB32N20CTM Datasheet

FQB32N20C/FQI32N20C

Part	Datasheet
FQB32N20CTM	FQB32N20CTM (pdf)

Related Parts	Information
FQI32N20CTU	FQI32N20CTU

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FQB32N20C/FQI32N20C FQB32N20C/FQI32N20C 200V N-Channel MOSFET October 2008 These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • 28A, 200V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical 185 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant D2-PAK FQB Series I2-PAK FQI Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Note 3 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQB32N20C / FQI32N20C 200 112 ± 30 955 156 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case

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FQB32N20C/FQI32N20C

FQB32N20C/FQI32N20C
200V N-Channel MOSFET

October 2008

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
• 28A, 200V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical 185 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant

D2-PAK

FQB Series

I2-PAK

FQI Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Note 3

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQB32N20C / FQI32N20C 200 112 ± 30 955 156
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case

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Datasheet ID: FQB32N20CTM 515156