TIPL791, TIPL791A NPN SILICON POWER TRANSISTORS
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TIPL791-S (pdf) |
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TIPL791A-S |
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TIPL791, TIPL791A NPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar Construction 4 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C 1000 Volt Blocking Capability This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage VBE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous device dissipation at or below 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1 This value applies for tp 10 ms, duty cycle TIPL791 TIPL791A TIPL791 TIPL791A TIPL791 TIPL791A VCBO VCES VCEO VEBO IC ICM Ptot Tj Tstg VALUE 850 1000 850 1000 400 450 10 4 8 75 -65 to +150 -65 to +150 UNIT V A W °C °C TIPL791, TIPL791A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter TIPL791 VCEO sus sustaining voltage IC = 100 mA L = 25 mH see Note 2 TIPL791A Collector-emitter ICES cut-off current ICEO IEBO Collector cut-off current Emitter cut-off current VCE = 850 V VCE = 1000 V VCE = 850 V VCE = 1000 V VCE = 400 V VCE = 450 V VEB = 10 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 |
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