FDA62N28

FDA62N28 Datasheet

FDA62N28 280V N-Channel MOSFET

Part	Datasheet
FDA62N28	FDA62N28 (pdf)

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FDA62N28 280V N-Channel MOSFET FDA62N28 280V N-Channel MOSFET • 62A, 280V, RDS on = = 10 V • Low gate charge typical 77 nC • Low Crss typical 83 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. TO-3PN FDA Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FDA62N28 280 62 37 248 ±30 1919 62 50 500 4 -55 to +150 Min. Max. Unit V A V mJ A mJ V/ns W/°C °C Unit °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDA62N28 Device FDA62N28 Package TO-3PN Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS / IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR On Characteristics VGS th RDS on Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Ciss Coss Crss Switching Characteristics td on tr td off tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 280V, VGS = 0V VDS = 224V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 31A VDS = 40V, ID = 31A Note 4 VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 140V, ID = 62A RG = VDS = 224V, ID = 62A VGS = 10V

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FDA62N28 280V N-Channel MOSFET

FDA62N28
280V N-Channel MOSFET
• 62A, 280V, RDS on = = 10 V
• Low gate charge typical 77 nC
• Low Crss typical 83 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

UniFET TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

TO-3PN

FDA Series

Absolute Maximum Ratings

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation

TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

FDA62N28
280 62 37 248 ±30 1919 62 50 500 4 -55 to +150

Min.

Max.

Unit

V A V mJ A mJ V/ns W/°C °C

Unit
°C/W °C/W °C/W
Package Marking and Ordering Information

Device Marking

FDA62N28

Device

FDA62N28

Package

TO-3PN

Reel Size

Tape Width

Quantity

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Conditions

Min.

Off Characteristics

BVDSS / IDSS

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF IGSSR

On Characteristics

VGS th RDS on

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Dynamic Characteristics

Ciss Coss Crss

Switching Characteristics
td on tr td off tf Qg Qgs Qgd

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

VGS = 0V, ID = 250µA

ID = 250µA, Referenced to 25°C

VDS = 280V, VGS = 0V

VDS = 224V, TC = 125°C

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

VDS = VGS, ID = 250µA VGS = 10V, ID = 31A VDS = 40V, ID = 31A

Note 4

VDS = 25V, VGS = 0V,
f = 1.0MHz

VDD = 140V, ID = 62A RG = VDS = 224V, ID = 62A VGS = 10V

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Datasheet ID: FDA62N28 514032