TIPL770-S
TIPL770-S Datasheet
TIPL770 NPN SILICON POWER TRANSISTOR
| Part | Datasheet |
|---|---|
TIPL770-S |
TIPL770-S (pdf) |
| PDF Datasheet Preview |
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| TIPL770 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C 850 Volt Blocking Capability 50 W at 25°C Case Temperature This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING Collector-base voltage IE = 0 VCBO OBSOLETE Collector-emitter voltage VBE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous device dissipation at or below 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1 This value applies for tp 10 ms, duty cycle VCES VCEO VEBO IC ICM Ptot Tj Tstg VALUE 850 400 10 8 50 -65 to +150 -65 to +150 UNIT V A W °C °C TIPL770 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter VCEO sus sustaining voltage IC = 100 mA L = 25 mH see Note 2 ICES ICEO Collector-emitter cut-off current Collector cut-off current VCE = 850 V VCE = 850 V VCE = 400 V VBE = 0 VBE = 0 IB = 0 TC = 100°C 5 µA IEBO Emitter cut-off current VEB = 10 V IC = 0 Forward current transfer ratio |
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