TIP2955-S

TIP2955-S Datasheet

TIP2955 PNP SILICON POWER TRANSISTOR

Part	Datasheet
TIP2955-S	TIP2955-S (pdf)

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TIP2955 PNP SILICON POWER TRANSISTOR ● Designed for Complementary Use with the TIP3055 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING VALUE UNIT Collector-base voltage IE = 0 VCBO -100 Collector-emitter voltage IB = 0 see Note 1 VCER Emitter-base voltage VEBO OBSOLETE Continuous collector current Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range Storage temperature range Lead temperature mm from case for 10 seconds IC IB Ptot Tj Tstg TL -65 to +150 -65 to +150 NOTES This value applies when the base-emitter resistance RBE = 100 Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = A, RBE = 100 VBE off = 0, RS = VCC = -10 V. PRODUCT INFORMATION TIP2955 PNP SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX Collector-emitter V BR CEO breakdown voltage IC = -30 mA IB = 0 see Note 5 Collector cut-off ICEO current VCE = -30 V IB = 0 Voltage between ICEV base and emitter

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TIP2955 PNP SILICON POWER TRANSISTOR
● Designed for Complementary Use with the TIP3055 Series
● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

SOT-93 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRAAA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

VALUE

UNIT

Collector-base voltage IE = 0

VCBO
-100

Collector-emitter voltage IB = 0 see Note 1

VCER

Emitter-base voltage

VEBO

OBSOLETE Continuous collector current

Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range Storage temperature range Lead temperature mm from case for 10 seconds

IC IB Ptot Tj Tstg TL
-65 to +150
-65 to +150

NOTES This value applies when the base-emitter resistance RBE = 100 Derate linearly to 150°C case temperature at the rate of W/°C.

Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = A, RBE = 100 VBE off = 0, RS = VCC = -10 V.

PRODUCT INFORMATION

TIP2955 PNP SILICON POWER TRANSISTOR
electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN TYP MAX

Collector-emitter V BR CEO breakdown voltage

IC = -30 mA

IB = 0
see Note 5

Collector cut-off

ICEO current

VCE = -30 V

IB = 0

Voltage between

ICEV base and emitter

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Datasheet ID: TIP2955-S 522285