TIC263M-S

TIC263M-S Datasheet

TIC263 SERIES SILICON TRIACS

Part	Datasheet
TIC263M-S	TIC263M-S (pdf)

Related Parts	Information
TIC263S-S	TIC263S-S
TIC263D-S	TIC263D-S
TIC263N-S	TIC263N-S

PDF Datasheet Preview
TIC263 SERIES SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA Quadrants 1 - 3 SOT-93 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDC2ADA absolute maximum ratings over operating case temperature unless otherwise noted RATING VALUE UNIT OBSOLETE TIC263D Repetitive peak off-state voltage see Note 1 TIC263M TIC263S TIC263N Full-cycle RMS on-state current at or below 60°C case temperature see Note 2 Peak on-state surge current full-sine-wave at or below 25°C case temperature see Note 3 Peak gate current Operating case temperature range Storage temperature range Lead temperature mm from case for 10 seconds VDRM IT RMS ITSM IGM TC Tstg TL 600 V -40 to +110 -40 to +125 electrical characteristics at 25°C case temperature unless otherwise noted IDRM PARAMETER Repetitive peak off-state current Gate trigger current Gate trigger voltage On-state voltage VD = Rated VDRM Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† IT = A TEST CONDITIONS IG = 0 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 IG = 50 mA TC = 110°C tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs see Note 4 MIN TYP MAX UNIT -30 -50 mA

PDF Datasheet Preview

TIC263 SERIES SILICON TRIACS
● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA Quadrants 1 - 3

SOT-93 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDC2ADA
absolute maximum ratings over operating case temperature unless otherwise noted

RATING

VALUE

UNIT

OBSOLETE TIC263D

Repetitive peak off-state voltage see Note 1

TIC263M TIC263S

TIC263N

Full-cycle RMS on-state current at or below 60°C case temperature see Note 2

Peak on-state surge current full-sine-wave at or below 25°C case temperature see Note 3

Peak gate current

Operating case temperature range

Storage temperature range

Lead temperature mm from case for 10 seconds

VDRM

IT RMS ITSM IGM TC Tstg TL
600 V
-40 to +110
-40 to +125
electrical characteristics at 25°C case temperature unless otherwise noted

IDRM

PARAMETER Repetitive peak off-state current

Gate trigger
current

Gate trigger
voltage

On-state voltage

VD = Rated VDRM

Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† IT = A

TEST CONDITIONS

IG = 0

RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 IG = 50 mA

TC = 110°C
tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs tp g > 20 µs see Note 4

MIN TYP MAX UNIT
-30 -50 mA

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived TIC263M-S Datasheet file may be downloaded here without warranties.

Datasheet ID: TIC263M-S 522283