AOD522P
AOD522P Datasheet
AOD522P
| Part | Datasheet |
|---|---|
AOD522P |
AOD522P (pdf) |
| PDF Datasheet Preview |
|---|
| AOD522P 30V N-Channel AlphaMOS • Latest Trench Power MOSFET technology • Very Low RDS on at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 46A < < TO252 DPAK TopView Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C Avalanche energy L=0.1mH C VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 46 36 160 17 13 25 31 36 53 26 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 15 40 Maximum Junction-to-Case Steady-State |
| More datasheets: BXRC-30G4000-F-02 | BXRC-30H4000-F-02 | BXRC-40G4000-F-02 | BXRC-40E4000-F-02 | BXRC-30E4000-F-02 | BXRC-35E4000-F-02 | S560-6600-HW-F | 400442 | 18812 | 3431 |
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